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Vacancy charging on Si(100)-(2×1): Consequences for surface diffusion and STM imaging
Ho Yeung H. Chan
, Kapil Dev
,
E. G. Seebauer
Chemical and Biomolecular Engineering
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Dive into the research topics of 'Vacancy charging on Si(100)-(2×1): Consequences for surface diffusion and STM imaging'. Together they form a unique fingerprint.
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Keyphrases
Charged Vacancy
50%
Density Functional Theory
50%
Diffusion Imaging
100%
Illumination Influence
50%
Monovacancy
50%
Negative-U
50%
Neutral State
50%
Scanning Tunneling Microscopy
50%
Si(100) Surface
50%
Si(111)
100%
State of Charge
50%
STM Imaging
100%
Structural Relaxation
50%
Surface Diffusion
100%
Material Science
Density
50%
Scanning Tunneling Microscopy
100%
Structural Relaxation
50%
Surface (Surface Science)
50%
Surface Diffusion
100%
Physics
Density Functional Theory
50%
Energetics
50%
Scanning Tunneling Microscopy
50%
Surface Diffusion
100%
Engineering
Charge State
50%
Energetics
50%
Multiplicity
50%
Scanning Tunneling Microscopy
100%
Computer Science
Density Functional Theory
100%
Multiplicity
100%