v-E Dependence in Small-Sized MOS Transistors

Jean-Pierre Leburton, Gerhard E. Dorda

Research output: Contribution to journalArticle

Abstract

It is demonstrated that the hyperbolic relation for the v-E dependence which is usually used in transistor modeling, does not hold in short-channel MOSFET's (L//e//f//f less than 5 mu m). A new v-E relation is proposed, which is a surface modification of the Scharfetter-Gummel formula and which takes into account the pronounced role of warm electrons. The analysis shows that the lateral electric field at the source determines the transport properties in the channel. A comparison of theoretical results with experimental data is given.

Original languageEnglish (US)
Pages (from-to)1168-1171
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume29
Issue number8
DOIs
StatePublished - Aug 1982
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'v-E Dependence in Small-Sized MOS Transistors'. Together they form a unique fingerprint.

  • Cite this