It is demonstrated that the hyperbolic relation for the v-E dependence which is usually used in transistor modeling, does not hold in short-channel MOSFET's (L//e//f//f less than 5 mu m). A new v-E relation is proposed, which is a surface modification of the Scharfetter-Gummel formula and which takes into account the pronounced role of warm electrons. The analysis shows that the lateral electric field at the source determines the transport properties in the channel. A comparison of theoretical results with experimental data is given.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering