Abstract
We constructed ultraviolet (UV) photodetectors using thin films of silicon nanoparticles as active media. The Si nanoparticle films are electrodeposited at room temperature on Si p-type substrates. Uniform silicon nanoparticles of 1-nm diameter are dispersed from Si wafers using electrochemical etching. The nanoparticles are ultrabright under UV excitation, with nanosecond luminescence time characteristics. Current-voltage (I-V) characteristics indicate a photoconductor in series with a diode-like junction with a large enhancement in the forward current under UV illumination. Our results point to a sensitive UV detector with good visible blindness where the particle films effectively constitutes a wide-bandgap material.
Original language | English (US) |
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Pages (from-to) | 660-668 |
Number of pages | 9 |
Journal | IEEE Transactions on Nanotechnology |
Volume | 4 |
Issue number | 6 |
DOIs | |
State | Published - Nov 2005 |
Keywords
- Nanotechnology
- Photoconducting devices
- Photoconductivity
- Photodetector
- Photodiode
- Semiconductor devices
- Silicon
- Thin films
ASJC Scopus subject areas
- Computer Science Applications
- Electrical and Electronic Engineering