UV photodetectors with thin-film Si nanoparticle active medium

Munir H. Nayfeh, Satish Rao, Osama Munir Nayfeh, Adam Smith, Joel Therrien

Research output: Contribution to journalArticlepeer-review


We constructed ultraviolet (UV) photodetectors using thin films of silicon nanoparticles as active media. The Si nanoparticle films are electrodeposited at room temperature on Si p-type substrates. Uniform silicon nanoparticles of 1-nm diameter are dispersed from Si wafers using electrochemical etching. The nanoparticles are ultrabright under UV excitation, with nanosecond luminescence time characteristics. Current-voltage (I-V) characteristics indicate a photoconductor in series with a diode-like junction with a large enhancement in the forward current under UV illumination. Our results point to a sensitive UV detector with good visible blindness where the particle films effectively constitutes a wide-bandgap material.

Original languageEnglish (US)
Pages (from-to)660-668
Number of pages9
JournalIEEE Transactions on Nanotechnology
Issue number6
StatePublished - Nov 2005


  • Nanotechnology
  • Photoconducting devices
  • Photoconductivity
  • Photodetector
  • Photodiode
  • Semiconductor devices
  • Silicon
  • Thin films

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering


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