Utilization of an electron beam resist process to examine the effects of asymmetric gate recess on the device characteristics of AlGaAs/InGaAs PHEMT's

Ronald Grundbacher; Dan Ballegeer; Andrew A. Ketterson; Y. C. Kao; Ilesanmi Adesida

doi:10.1109/16.644626

Utilization of an electron beam resist process to examine the effects of asymmetric gate recess on the device characteristics of AlGaAs/InGaAs PHEMT's

Ronald Grundbacher, Dan Ballegeer, Andrew A. Ketterson, Y. C. Kao, Ilesanmi Adesida

Research output: Contribution to journal › Article › peer-review

Abstract

The DC and microwave characteristics of two sets of AlGaAs/InGaAs PHEMT's having a gate length of 0.2 μm are compared. The first set is composed of devices fabricated using a trilayer electron beam resist process for T-gate recess and metallization. The second set is composed of devices fabricated using a new four-layer electron beam resist process which enables the asymmetric placement of a T-gate in a wide recess trench. Devices fabricated using the four-layer resist process showed improved breakdown voltage lower gate-drain feedback capacitance lower output conductance and higher f_max with only slight reduction of drain current and transconductance. For example the off-state drain-source breakdown voltage increased from 5.2 to 12.5 V and the f_max increased from 133 to 158 GHz as the drain side cap recess L_ud was increased from 0 to 0.55 μm.

Original language	English (US)
Pages (from-to)	2136-2142
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	44
Issue number	12
DOIs	https://doi.org/10.1109/16.644626
State	Published - 1997
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/16.644626

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title = "Utilization of an electron beam resist process to examine the effects of asymmetric gate recess on the device characteristics of AlGaAs/InGaAs PHEMT's",

abstract = "The DC and microwave characteristics of two sets of AlGaAs/InGaAs PHEMT's having a gate length of 0.2 μm are compared. The first set is composed of devices fabricated using a trilayer electron beam resist process for T-gate recess and metallization. The second set is composed of devices fabricated using a new four-layer electron beam resist process which enables the asymmetric placement of a T-gate in a wide recess trench. Devices fabricated using the four-layer resist process showed improved breakdown voltage lower gate-drain feedback capacitance lower output conductance and higher fmax with only slight reduction of drain current and transconductance. For example the off-state drain-source breakdown voltage increased from 5.2 to 12.5 V and the fmax increased from 133 to 158 GHz as the drain side cap recess Lud was increased from 0 to 0.55 μm.",

author = "Ronald Grundbacher and Dan Ballegeer and Ketterson, {Andrew A.} and Kao, {Y. C.} and Ilesanmi Adesida",

note = "Funding Information: Manuscript received November 1, 1996; revised March 28, 1997. The review of this paper was arranged by Editor K. M. Lau. This work was supported by Grants NSF ECS 92-02294 and NSF ECD 89-43166, and JSEP Grant N00014-96-1-0129.",

year = "1997",

doi = "10.1109/16.644626",

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pages = "2136--2142",

journal = "IEEE Transactions on Electron Devices",

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T1 - Utilization of an electron beam resist process to examine the effects of asymmetric gate recess on the device characteristics of AlGaAs/InGaAs PHEMT's

AU - Grundbacher, Ronald

AU - Ballegeer, Dan

AU - Ketterson, Andrew A.

AU - Kao, Y. C.

AU - Adesida, Ilesanmi

N1 - Funding Information: Manuscript received November 1, 1996; revised March 28, 1997. The review of this paper was arranged by Editor K. M. Lau. This work was supported by Grants NSF ECS 92-02294 and NSF ECD 89-43166, and JSEP Grant N00014-96-1-0129.

PY - 1997

Y1 - 1997

N2 - The DC and microwave characteristics of two sets of AlGaAs/InGaAs PHEMT's having a gate length of 0.2 μm are compared. The first set is composed of devices fabricated using a trilayer electron beam resist process for T-gate recess and metallization. The second set is composed of devices fabricated using a new four-layer electron beam resist process which enables the asymmetric placement of a T-gate in a wide recess trench. Devices fabricated using the four-layer resist process showed improved breakdown voltage lower gate-drain feedback capacitance lower output conductance and higher fmax with only slight reduction of drain current and transconductance. For example the off-state drain-source breakdown voltage increased from 5.2 to 12.5 V and the fmax increased from 133 to 158 GHz as the drain side cap recess Lud was increased from 0 to 0.55 μm.

AB - The DC and microwave characteristics of two sets of AlGaAs/InGaAs PHEMT's having a gate length of 0.2 μm are compared. The first set is composed of devices fabricated using a trilayer electron beam resist process for T-gate recess and metallization. The second set is composed of devices fabricated using a new four-layer electron beam resist process which enables the asymmetric placement of a T-gate in a wide recess trench. Devices fabricated using the four-layer resist process showed improved breakdown voltage lower gate-drain feedback capacitance lower output conductance and higher fmax with only slight reduction of drain current and transconductance. For example the off-state drain-source breakdown voltage increased from 5.2 to 12.5 V and the fmax increased from 133 to 158 GHz as the drain side cap recess Lud was increased from 0 to 0.55 μm.

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JF - IEEE Transactions on Electron Devices

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Utilization of an electron beam resist process to examine the effects of asymmetric gate recess on the device characteristics of AlGaAs/InGaAs PHEMT's

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