Using surface chemistry for defect engineering in ultrashallow junction formation

There is increasing evidence that nature of chemical bonding at surfaces can affect dopant activation and transient enhanced diffusion in silicon during ultrashallow junction formation. The surface exerts its effects on bulk interstitial atoms through two separate mechanisms: electrostatic repulsion and surface bond insertion. This paper highlights recent experimental and computational results we have obtained regarding both mechanisms. Proper adjustment of the bond insertion mechanism has is likely to improve dopant activation and diffusional spreading simultaneously.