Using surface chemistry for defect engineering in ultrashallow junction formation

Research output: Contribution to conferencePaperpeer-review


There is increasing evidence that nature of chemical bonding at surfaces can affect dopant activation and transient enhanced diffusion in silicon during ultrashallow junction formation. The surface exerts its effects on bulk interstitial atoms through two separate mechanisms: electrostatic repulsion and surface bond insertion. This paper highlights recent experimental and computational results we have obtained regarding both mechanisms. Proper adjustment of the bond insertion mechanism has is likely to improve dopant activation and diffusional spreading simultaneously.

Original languageEnglish (US)
Number of pages10
StatePublished - 2005
Event207th ECS Meeting - Quebec, Canada
Duration: May 16 2005May 20 2005


Other207th ECS Meeting

ASJC Scopus subject areas

  • General Engineering


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