Using surface chemistry for defect engineering in ultrashallow junction formation

Research output: Contribution to conferencePaper

Abstract

There is increasing evidence that nature of chemical bonding at surfaces can affect dopant activation and transient enhanced diffusion in silicon during ultrashallow junction formation. The surface exerts its effects on bulk interstitial atoms through two separate mechanisms: electrostatic repulsion and surface bond insertion. This paper highlights recent experimental and computational results we have obtained regarding both mechanisms. Proper adjustment of the bond insertion mechanism has is likely to improve dopant activation and diffusional spreading simultaneously.

Original languageEnglish (US)
Pages33-42
Number of pages10
StatePublished - Dec 1 2005
Event207th ECS Meeting - Quebec, Canada
Duration: May 16 2005May 20 2005

Other

Other207th ECS Meeting
CountryCanada
CityQuebec
Period5/16/055/20/05

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Seebauer, E. G. (2005). Using surface chemistry for defect engineering in ultrashallow junction formation. 33-42. Paper presented at 207th ECS Meeting, Quebec, Canada.