Uniformity study of GaAs-based vertical-cavity surface-emitting laser epiwafer grown by MOCVD technique

Mohd Sharizal Alias; Paul O. Leisher; Kent D. Choquette; Khairul Anuar; Dominic Siriani; Sufian Mitani; Y. Mohd Razman; A. M. Abdul Fatah

doi:10.1109/SMELEC.2006.381052

Uniformity study of GaAs-based vertical-cavity surface-emitting laser epiwafer grown by MOCVD technique

Mohd Sharizal Alias
, Paul O. Leisher
, Kent D. Choquette
, Khairul Anuar
, Dominic Siriani
, Sufian Mitani
, Y. Mohd Razman
, A. M. Abdul Fatah

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, a highly uniform 850 nm VCSEL epiwafer was grown by using MOCVD technique. The VCSEL quantum wells exhibit a peak emission wavelength of 839.5 nm. The grown epiwafer exhibits a Fabry-Perot cavity resonance at 846.5 nm. Various VCSEL devices fabricated from the center to the edge of the VCSEL epiwafer show similar trend for the L-I and output spectral characterizations. Devices fabricated at the edge of the epiwafer exhibits different characterization trends due to the growth limitations.

Original language	English (US)
Title of host publication	ICSE 2006
Subtitle of host publication	2006 IEEE International Conference on Semiconductor Electronics, Proceedings
Pages	223-226
Number of pages	4
DOIs	https://doi.org/10.1109/SMELEC.2006.381052
State	Published - 2006
Event	2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur, Malaysia Duration: Nov 29 2006 → Dec 1 2006

Publication series

Name	IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Other

Other	2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
Country/Territory	Malaysia
City	Kuala Lumpur
Period	11/29/06 → 12/1/06

ASJC Scopus subject areas

General Engineering

Online availability

10.1109/SMELEC.2006.381052

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Alias, M. S., Leisher, P. O., Choquette, K. D., Anuar, K., Siriani, D., Mitani, S., Mohd Razman, Y., & Abdul Fatah, A. M. (2006). Uniformity study of GaAs-based vertical-cavity surface-emitting laser epiwafer grown by MOCVD technique. In ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings (pp. 223-226). Article 4266602 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). https://doi.org/10.1109/SMELEC.2006.381052

Uniformity study of GaAs-based vertical-cavity surface-emitting laser epiwafer grown by MOCVD technique. / Alias, Mohd Sharizal; Leisher, Paul O.; Choquette, Kent D. et al.
ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings. 2006. p. 223-226 4266602 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Alias, MS, Leisher, PO, Choquette, KD, Anuar, K, Siriani, D, Mitani, S, Mohd Razman, Y & Abdul Fatah, AM 2006, Uniformity study of GaAs-based vertical-cavity surface-emitting laser epiwafer grown by MOCVD technique. in ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings., 4266602, IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, pp. 223-226, 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006, Kuala Lumpur, Malaysia, 11/29/06. https://doi.org/10.1109/SMELEC.2006.381052

Alias MS, Leisher PO, Choquette KD, Anuar K, Siriani D, Mitani S et al. Uniformity study of GaAs-based vertical-cavity surface-emitting laser epiwafer grown by MOCVD technique. In ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings. 2006. p. 223-226. 4266602. (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). doi: 10.1109/SMELEC.2006.381052

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title = "Uniformity study of GaAs-based vertical-cavity surface-emitting laser epiwafer grown by MOCVD technique",

abstract = "In this paper, a highly uniform 850 nm VCSEL epiwafer was grown by using MOCVD technique. The VCSEL quantum wells exhibit a peak emission wavelength of 839.5 nm. The grown epiwafer exhibits a Fabry-Perot cavity resonance at 846.5 nm. Various VCSEL devices fabricated from the center to the edge of the VCSEL epiwafer show similar trend for the L-I and output spectral characterizations. Devices fabricated at the edge of the epiwafer exhibits different characterization trends due to the growth limitations.",

author = "Alias, \{Mohd Sharizal\} and Leisher, \{Paul O.\} and Choquette, \{Kent D.\} and Khairul Anuar and Dominic Siriani and Sufian Mitani and \{Mohd Razman\}, Y. and \{Abdul Fatah\}, \{A. M.\}",

year = "2006",

doi = "10.1109/SMELEC.2006.381052",

language = "English (US)",

isbn = "0780397312",

series = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",

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AU - Alias, Mohd Sharizal

AU - Leisher, Paul O.

AU - Choquette, Kent D.

AU - Anuar, Khairul

AU - Siriani, Dominic

AU - Mitani, Sufian

AU - Mohd Razman, Y.

AU - Abdul Fatah, A. M.

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N2 - In this paper, a highly uniform 850 nm VCSEL epiwafer was grown by using MOCVD technique. The VCSEL quantum wells exhibit a peak emission wavelength of 839.5 nm. The grown epiwafer exhibits a Fabry-Perot cavity resonance at 846.5 nm. Various VCSEL devices fabricated from the center to the edge of the VCSEL epiwafer show similar trend for the L-I and output spectral characterizations. Devices fabricated at the edge of the epiwafer exhibits different characterization trends due to the growth limitations.

AB - In this paper, a highly uniform 850 nm VCSEL epiwafer was grown by using MOCVD technique. The VCSEL quantum wells exhibit a peak emission wavelength of 839.5 nm. The grown epiwafer exhibits a Fabry-Perot cavity resonance at 846.5 nm. Various VCSEL devices fabricated from the center to the edge of the VCSEL epiwafer show similar trend for the L-I and output spectral characterizations. Devices fabricated at the edge of the epiwafer exhibits different characterization trends due to the growth limitations.

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SN - 9780780397316

T3 - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

SP - 223

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BT - ICSE 2006

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Y2 - 29 November 2006 through 1 December 2006

ER -

Uniformity study of GaAs-based vertical-cavity surface-emitting laser epiwafer grown by MOCVD technique

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