Abstract
The ability to fabricate high density 2-dimensional arrays is an inherent advantage of vertical cavity surface emitting lasers (VCSEL). VCSEL arrays integrated monolithically or integrated using a hybrid technology to microelectronics will have the potential to achieve `VLSI photonics,' considered the next generation of photoelectronics. Suitable VCSEL arrays will require high uniformity and low input power in order to achieve an appropriate element density with manageable thermal load, but will only need modest output power. An 8×8 individually addressable array of selectively oxidized 1.06 μm VCSEL is described, and the preliminary arrays that have promising characteristics for VLSI photonic applications are shown.
Original language | English (US) |
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Pages (from-to) | 417-418 |
Number of pages | 2 |
Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
Volume | 2 |
State | Published - 1997 |
Externally published | Yes |
Event | Proceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2) - San Francisco, CA, USA Duration: Nov 10 1997 → Nov 13 1997 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering