@inproceedings{dfabbf1d16fa49c9808c876e211e0f96,
title = "Understanding transient latchup hazards and the impact of guard rings",
abstract = "An experimental study of transient latchup is conducted. Measurements are performed on test structures fabricated in 90-nm and 130-nm CMOS technologies. The worst case testing conditions differ for static and transient latchup. Device simulation is used to understand the measurement results. P-well and N-well guard rings are evaluated under transient test conditions.",
keywords = "Guard rings, Latchup",
author = "Farzan Farbiz and Elyse Rosenbaum",
year = "2010",
doi = "10.1109/IRPS.2010.5488787",
language = "English (US)",
isbn = "9781424454310",
series = "IEEE International Reliability Physics Symposium Proceedings",
pages = "466--473",
booktitle = "2010 IEEE International Reliability Physics Symposium, IRPS 2010",
note = "2010 IEEE International Reliability Physics Symposium, IRPS 2010 ; Conference date: 02-05-2010 Through 06-05-2010",
}