Understanding the ion beam in EUV mask blank production

Patrick Kearney, Vibhu Jindal, Alfred Weaver, Pat Teora, John Sporre, David N Ruzic, Frank Goodwin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

One of the major technical hurdles to be overcome before EUV lithography can enter high volume manufacturing is the amount of defects in EUV mask blanks, many of which occur during the EUV reflector deposition process. The technology currently used to deposit this reflector is ion beam sputter deposition. Understanding the properties of the ion beam and the nature of the plasma in the deposition chamber is therefore critical to understanding defect production mechanisms and subsequently eliminating them. In this work, we have studied how the source parameters influence ion beam divergence, its footprint on the target, and the amount of beam that misses the target and hits the shielding. By optimizing the source parameters, we can modulate certain target- and shield-specific defect types. We have compared our data with models of source performance and found general agreement, enabling the theory to be fine-tuned based on the results of the measurements. Models are being developed to better describe actual source performance. We have also investigated the plasma conditions the ion beam creates in the tool, which is crucial to understanding the transport of defects from their source to the mask. A well characterized ion beam and plasma will lead to process and tool changes that will ultimately reduce defect levels in EUV mask blanks.

Original languageEnglish (US)
Title of host publicationExtreme Ultraviolet (EUV) Lithography III
Volume8322
DOIs
StatePublished - 2012
EventExtreme Ultraviolet (EUV) Lithography III - San Jose, CA, United States
Duration: Feb 13 2012Feb 16 2012

Other

OtherExtreme Ultraviolet (EUV) Lithography III
CountryUnited States
CitySan Jose, CA
Period2/13/122/16/12

Fingerprint

EUV Mask
blanks
Ion beams
Masks
masks
ion beams
Defects
defects
Plasmas
Plasma
reflectors
Reflector
Target
Extreme ultraviolet lithography
Sputter deposition
EUV Lithography
footprints
Shielding
shielding
Hits

Keywords

  • Defects
  • EUVL
  • Ion beam sputtering
  • Mask blank deposition

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Kearney, P., Jindal, V., Weaver, A., Teora, P., Sporre, J., Ruzic, D. N., & Goodwin, F. (2012). Understanding the ion beam in EUV mask blank production. In Extreme Ultraviolet (EUV) Lithography III (Vol. 8322). [83221U] https://doi.org/10.1117/12.916510

Understanding the ion beam in EUV mask blank production. / Kearney, Patrick; Jindal, Vibhu; Weaver, Alfred; Teora, Pat; Sporre, John; Ruzic, David N; Goodwin, Frank.

Extreme Ultraviolet (EUV) Lithography III. Vol. 8322 2012. 83221U.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kearney, P, Jindal, V, Weaver, A, Teora, P, Sporre, J, Ruzic, DN & Goodwin, F 2012, Understanding the ion beam in EUV mask blank production. in Extreme Ultraviolet (EUV) Lithography III. vol. 8322, 83221U, Extreme Ultraviolet (EUV) Lithography III, San Jose, CA, United States, 2/13/12. https://doi.org/10.1117/12.916510
Kearney P, Jindal V, Weaver A, Teora P, Sporre J, Ruzic DN et al. Understanding the ion beam in EUV mask blank production. In Extreme Ultraviolet (EUV) Lithography III. Vol. 8322. 2012. 83221U https://doi.org/10.1117/12.916510
Kearney, Patrick ; Jindal, Vibhu ; Weaver, Alfred ; Teora, Pat ; Sporre, John ; Ruzic, David N ; Goodwin, Frank. / Understanding the ion beam in EUV mask blank production. Extreme Ultraviolet (EUV) Lithography III. Vol. 8322 2012.
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