Ultraviolet ozone induced oxidation of epitaxial Si1-xGe x(111)

A. Agarwal, J. K. Patterson, J. E. Greene, A. Rockett

Research output: Contribution to journalArticlepeer-review

Abstract

Exposure of Si1-xGex(111) to ultraviolet light in air at room temperature is shown, using angle-resolved x-ray photoelectron spectroscopy and preferential etching, to lead to the formation of a two-phase oxide consisting of SiO2 and GeO2. Segregation of Ge was not observed at either the alloy/oxide or oxide/vapor interface. The oxidation rate was found to increase with increasing Ge content in the alloy.

Original languageEnglish (US)
Pages (from-to)518-520
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number4
DOIs
StatePublished - 1993

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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