Ultraviolet ozone induced oxidation of epitaxial Si1-xGe x(111)

A. Agarwal; J. K. Patterson; J. E. Greene; A. Rockett

doi:10.1063/1.109991

Ultraviolet ozone induced oxidation of epitaxial Si_1-xGe _x(111)

A. Agarwal, J. K. Patterson, J. E. Greene, A. Rockett

Research output: Contribution to journal › Article › peer-review

Abstract

Exposure of Si_1-xGe_x(111) to ultraviolet light in air at room temperature is shown, using angle-resolved x-ray photoelectron spectroscopy and preferential etching, to lead to the formation of a two-phase oxide consisting of SiO₂ and GeO₂. Segregation of Ge was not observed at either the alloy/oxide or oxide/vapor interface. The oxidation rate was found to increase with increasing Ge content in the alloy.

Original language	English (US)
Pages (from-to)	518-520
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	4
DOIs	https://doi.org/10.1063/1.109991
State	Published - 1993
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Online availability

10.1063/1.109991

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Cite this

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title = "Ultraviolet ozone induced oxidation of epitaxial Si1-xGe x(111)",

abstract = "Exposure of Si1-xGex(111) to ultraviolet light in air at room temperature is shown, using angle-resolved x-ray photoelectron spectroscopy and preferential etching, to lead to the formation of a two-phase oxide consisting of SiO2 and GeO2. Segregation of Ge was not observed at either the alloy/oxide or oxide/vapor interface. The oxidation rate was found to increase with increasing Ge content in the alloy.",

author = "A. Agarwal and Patterson, {J. K.} and Greene, {J. E.} and A. Rockett",

year = "1993",

doi = "10.1063/1.109991",

language = "English (US)",

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journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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AU - Agarwal, A.

AU - Patterson, J. K.

AU - Greene, J. E.

AU - Rockett, A.

PY - 1993

Y1 - 1993

N2 - Exposure of Si1-xGex(111) to ultraviolet light in air at room temperature is shown, using angle-resolved x-ray photoelectron spectroscopy and preferential etching, to lead to the formation of a two-phase oxide consisting of SiO2 and GeO2. Segregation of Ge was not observed at either the alloy/oxide or oxide/vapor interface. The oxidation rate was found to increase with increasing Ge content in the alloy.

AB - Exposure of Si1-xGex(111) to ultraviolet light in air at room temperature is shown, using angle-resolved x-ray photoelectron spectroscopy and preferential etching, to lead to the formation of a two-phase oxide consisting of SiO2 and GeO2. Segregation of Ge was not observed at either the alloy/oxide or oxide/vapor interface. The oxidation rate was found to increase with increasing Ge content in the alloy.

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