Exposure of Si1-xGex(111) to ultraviolet light in air at room temperature is shown, using angle-resolved x-ray photoelectron spectroscopy and preferential etching, to lead to the formation of a two-phase oxide consisting of SiO2 and GeO2. Segregation of Ge was not observed at either the alloy/oxide or oxide/vapor interface. The oxidation rate was found to increase with increasing Ge content in the alloy.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)