Ultralow shear modulus of incommensurate [SnSe]n[MoSe2]n layers synthesized by the method of modulated elemental reactants

Dongyao Li, André Schleife, David G. Cahill, Gavin Mitchson, David C. Johnson

Research output: Contribution to journalArticle

Abstract

We demonstrate that the shear elastic constant of misfit-layered dichalcogenide films [SnSe]n[MoSe2]n with n=1,2,3, synthesized by the modulated elemental reactants method, is c44≈1 GPa, an order of magnitude lower than c44 of typical layered crystals that have weak interlayer van der Waals bonding. The films are synthesized by alternating deposition of the elements to a total thickness of ≈60 nm followed by thermal annealing. We determine c44 through measurements of the velocities of 700 nm wavelength surface acoustic waves propagating along the surface of Al/[SnSe]n[MoSe2]n/Si structures in combination with picosecond acoustics measurements of c33 and calculations of the c11, c12, and c13 elastic constants by density functional theory. We attribute the low value of c44 to incommensurate interfaces between SnSe and MoSe2 layers and turbostratic disorder within the MoSe2 layers. We conclude that the ultralow shear modulus of disordered layered materials contributes significantly to their exceptionally low thermal conductivity.

Original languageEnglish (US)
Article number043607
JournalPhysical Review Materials
Volume3
Issue number4
DOIs
StatePublished - Apr 26 2019

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Elastic constants
elastic properties
Elastic moduli
shear
acoustic measurement
Surface waves
Density functional theory
interlayers
Thermal conductivity
thermal conductivity
Acoustics
Acoustic waves
disorders
Annealing
density functional theory
Wavelength
Crystals
annealing
acoustics
wavelengths

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

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Ultralow shear modulus of incommensurate [SnSe]n[MoSe2]n layers synthesized by the method of modulated elemental reactants. / Li, Dongyao; Schleife, André; Cahill, David G.; Mitchson, Gavin; Johnson, David C.

In: Physical Review Materials, Vol. 3, No. 4, 043607, 26.04.2019.

Research output: Contribution to journalArticle

@article{7a1b22ed42c6451782c1abae7ffac919,
title = "Ultralow shear modulus of incommensurate [SnSe]n[MoSe2]n layers synthesized by the method of modulated elemental reactants",
abstract = "We demonstrate that the shear elastic constant of misfit-layered dichalcogenide films [SnSe]n[MoSe2]n with n=1,2,3, synthesized by the modulated elemental reactants method, is c44≈1 GPa, an order of magnitude lower than c44 of typical layered crystals that have weak interlayer van der Waals bonding. The films are synthesized by alternating deposition of the elements to a total thickness of ≈60 nm followed by thermal annealing. We determine c44 through measurements of the velocities of 700 nm wavelength surface acoustic waves propagating along the surface of Al/[SnSe]n[MoSe2]n/Si structures in combination with picosecond acoustics measurements of c33 and calculations of the c11, c12, and c13 elastic constants by density functional theory. We attribute the low value of c44 to incommensurate interfaces between SnSe and MoSe2 layers and turbostratic disorder within the MoSe2 layers. We conclude that the ultralow shear modulus of disordered layered materials contributes significantly to their exceptionally low thermal conductivity.",
author = "Dongyao Li and Andr{\'e} Schleife and Cahill, {David G.} and Gavin Mitchson and Johnson, {David C.}",
year = "2019",
month = "4",
day = "26",
doi = "10.1103/PhysRevMaterials.3.043607",
language = "English (US)",
volume = "3",
journal = "Physical Review Materials",
issn = "2475-9953",
publisher = "American Physical Society",
number = "4",

}

TY - JOUR

T1 - Ultralow shear modulus of incommensurate [SnSe]n[MoSe2]n layers synthesized by the method of modulated elemental reactants

AU - Li, Dongyao

AU - Schleife, André

AU - Cahill, David G.

AU - Mitchson, Gavin

AU - Johnson, David C.

PY - 2019/4/26

Y1 - 2019/4/26

N2 - We demonstrate that the shear elastic constant of misfit-layered dichalcogenide films [SnSe]n[MoSe2]n with n=1,2,3, synthesized by the modulated elemental reactants method, is c44≈1 GPa, an order of magnitude lower than c44 of typical layered crystals that have weak interlayer van der Waals bonding. The films are synthesized by alternating deposition of the elements to a total thickness of ≈60 nm followed by thermal annealing. We determine c44 through measurements of the velocities of 700 nm wavelength surface acoustic waves propagating along the surface of Al/[SnSe]n[MoSe2]n/Si structures in combination with picosecond acoustics measurements of c33 and calculations of the c11, c12, and c13 elastic constants by density functional theory. We attribute the low value of c44 to incommensurate interfaces between SnSe and MoSe2 layers and turbostratic disorder within the MoSe2 layers. We conclude that the ultralow shear modulus of disordered layered materials contributes significantly to their exceptionally low thermal conductivity.

AB - We demonstrate that the shear elastic constant of misfit-layered dichalcogenide films [SnSe]n[MoSe2]n with n=1,2,3, synthesized by the modulated elemental reactants method, is c44≈1 GPa, an order of magnitude lower than c44 of typical layered crystals that have weak interlayer van der Waals bonding. The films are synthesized by alternating deposition of the elements to a total thickness of ≈60 nm followed by thermal annealing. We determine c44 through measurements of the velocities of 700 nm wavelength surface acoustic waves propagating along the surface of Al/[SnSe]n[MoSe2]n/Si structures in combination with picosecond acoustics measurements of c33 and calculations of the c11, c12, and c13 elastic constants by density functional theory. We attribute the low value of c44 to incommensurate interfaces between SnSe and MoSe2 layers and turbostratic disorder within the MoSe2 layers. We conclude that the ultralow shear modulus of disordered layered materials contributes significantly to their exceptionally low thermal conductivity.

UR - http://www.scopus.com/inward/record.url?scp=85065416912&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85065416912&partnerID=8YFLogxK

U2 - 10.1103/PhysRevMaterials.3.043607

DO - 10.1103/PhysRevMaterials.3.043607

M3 - Article

AN - SCOPUS:85065416912

VL - 3

JO - Physical Review Materials

JF - Physical Review Materials

SN - 2475-9953

IS - 4

M1 - 043607

ER -