Abstract
A novel top-illuminated In0.53Ga0.47As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using linearly graded metamorphic InxGa1-xP (x graded from 0.49 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 μm are 13 pA, 0.6 A/W, 3.4 × 10-15 W/Hz1/2, and 7.5 GHz, respectively, at 1550 nm. The performances of the MM-PINPD on GaAs are demonstrated to be comparable to those of a similar device made on InGaAs-InP substrate.
Original language | English (US) |
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Pages (from-to) | 749-752 |
Number of pages | 4 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 41 |
Issue number | 6 |
DOIs | |
State | Published - Jun 2005 |
Keywords
- GaAs
- InGaAs
- InGaP
- Metamorphic
- P-i-n photodetector
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering