Ultralow leakage In0.53Ga0.47As p-i-n photodetector grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate

Gong Ru Lin, Hao Chung Kuo, Chi Kuan Lin, Milton Feng

Research output: Contribution to journalArticlepeer-review

Abstract

A novel top-illuminated In0.53Ga0.47As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using linearly graded metamorphic InxGa1-xP (x graded from 0.49 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 μm are 13 pA, 0.6 A/W, 3.4 × 10-15 W/Hz1/2, and 7.5 GHz, respectively, at 1550 nm. The performances of the MM-PINPD on GaAs are demonstrated to be comparable to those of a similar device made on InGaAs-InP substrate.

Original languageEnglish (US)
Pages (from-to)749-752
Number of pages4
JournalIEEE Journal of Quantum Electronics
Volume41
Issue number6
DOIs
StatePublished - Jun 1 2005

Keywords

  • GaAs
  • InGaAs
  • InGaP
  • Metamorphic
  • P-i-n photodetector

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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