Ultrahigh vacuum-scanning tunneling microscopy nanofabrication and hydrogen/deuterium desorption from silicon surfaces: Implications for complementary metal oxide semiconductor technology

J. W. Lyding, K. Hess, G. C. Abeln, D. S. Thompson, J. S. Moore, M. C. Hersam, E. T. Foley, J. Lee, Z. Chen, S. T. Hwang, H. Choi, Ph Avouris, I. C. Kizilyalli

Research output: Contribution to journalConference articlepeer-review

Fingerprint

Dive into the research topics of 'Ultrahigh vacuum-scanning tunneling microscopy nanofabrication and hydrogen/deuterium desorption from silicon surfaces: Implications for complementary metal oxide semiconductor technology'. Together they form a unique fingerprint.

Keyphrases

INIS

Material Science

Chemical Engineering