Ultrahigh thermal conductivity in isotope-enriched cubic boron nitride

Ke Chen; Bai Song; Navaneetha K. Ravichandran; Qiye Zheng; Xi Chen; Hwijong Lee; Haoran Sun; Sheng Li; Geethal Amila Gamage Udalamatta Gamage; Fei Tian; Zhiwei Ding; Qichen Song; Akash Rai; Hanlin Wu; Pawan Koirala; Aaron J. Schmidt; Kenji Watanabe; Bing Lv; Zhifeng Ren; Li Shi; David G. Cahill; Takashi Taniguchi; David Broido; Gang Chen

doi:10.1126/science.aaz6149

Ultrahigh thermal conductivity in isotope-enriched cubic boron nitride

Ke Chen, Bai Song, Navaneetha K. Ravichandran, Qiye Zheng, Xi Chen, Hwijong Lee, Haoran Sun, Sheng Li, Geethal Amila Gamage Udalamatta Gamage, Fei Tian, Zhiwei Ding, Qichen Song, Akash Rai, Hanlin Wu, Pawan Koirala, Aaron J. Schmidt, Kenji Watanabe, Bing Lv, Zhifeng Ren, Li ShiDavid G. Cahill, Takashi Taniguchi, David Broido, Gang Chen

Research output: Contribution to journal › Article

Abstract

Materials with high thermal conductivity (k) are of technological importance and fundamental interest. We grew cubic boron nitride (cBN) crystals with controlled abundance of boron isotopes and measured k greater than 1600 watts per meter-kelvin at room temperature in samples with enriched 10B or 11B. In comparison, we found that the isotope enhancement of k is considerably lower for boron phosphide and boron arsenide as the identical isotopic mass disorder becomes increasingly invisible to phonons. The ultrahigh k in conjunction with its wide bandgap (6.2 electron volts) makes cBN a promising material for microelectronics thermal management, high-power electronics, and optoelectronics applications.

Original language	English (US)
Pages (from-to)	555-559
Number of pages	5
Journal	Science
Volume	367
Issue number	6477
DOIs	https://doi.org/10.1126/science.aaz6149
State	Published - Jan 31 2020

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Chen, K., Song, B., Ravichandran, N. K., Zheng, Q., Chen, X., Lee, H., Sun, H., Li, S., Gamage, G. A. G. U., Tian, F., Ding, Z., Song, Q., Rai, A., Wu, H., Koirala, P., Schmidt, A. J., Watanabe, K., Lv, B., Ren, Z., ... Chen, G. (2020). Ultrahigh thermal conductivity in isotope-enriched cubic boron nitride. Science, 367(6477), 555-559. https://doi.org/10.1126/science.aaz6149

Ultrahigh thermal conductivity in isotope-enriched cubic boron nitride. / Chen, Ke; Song, Bai; Ravichandran, Navaneetha K.; Zheng, Qiye; Chen, Xi; Lee, Hwijong; Sun, Haoran; Li, Sheng; Gamage, Geethal Amila Gamage Udalamatta; Tian, Fei; Ding, Zhiwei; Song, Qichen; Rai, Akash; Wu, Hanlin; Koirala, Pawan; Schmidt, Aaron J.; Watanabe, Kenji; Lv, Bing; Ren, Zhifeng; Shi, Li; Cahill, David G.; Taniguchi, Takashi; Broido, David; Chen, Gang.

In: Science, Vol. 367, No. 6477, 31.01.2020, p. 555-559.

Research output: Contribution to journal › Article

Chen, K, Song, B, Ravichandran, NK, Zheng, Q, Chen, X, Lee, H, Sun, H, Li, S, Gamage, GAGU, Tian, F, Ding, Z, Song, Q, Rai, A, Wu, H, Koirala, P, Schmidt, AJ, Watanabe, K, Lv, B, Ren, Z, Shi, L, Cahill, DG, Taniguchi, T, Broido, D & Chen, G 2020, 'Ultrahigh thermal conductivity in isotope-enriched cubic boron nitride', Science, vol. 367, no. 6477, pp. 555-559. https://doi.org/10.1126/science.aaz6149

Chen, Ke ; Song, Bai ; Ravichandran, Navaneetha K. ; Zheng, Qiye ; Chen, Xi ; Lee, Hwijong ; Sun, Haoran ; Li, Sheng ; Gamage, Geethal Amila Gamage Udalamatta ; Tian, Fei ; Ding, Zhiwei ; Song, Qichen ; Rai, Akash ; Wu, Hanlin ; Koirala, Pawan ; Schmidt, Aaron J. ; Watanabe, Kenji ; Lv, Bing ; Ren, Zhifeng ; Shi, Li ; Cahill, David G. ; Taniguchi, Takashi ; Broido, David ; Chen, Gang. / Ultrahigh thermal conductivity in isotope-enriched cubic boron nitride. In: Science. 2020 ; Vol. 367, No. 6477. pp. 555-559.

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abstract = "Materials with high thermal conductivity (k) are of technological importance and fundamental interest. We grew cubic boron nitride (cBN) crystals with controlled abundance of boron isotopes and measured k greater than 1600 watts per meter-kelvin at room temperature in samples with enriched 10B or 11B. In comparison, we found that the isotope enhancement of k is considerably lower for boron phosphide and boron arsenide as the identical isotopic mass disorder becomes increasingly invisible to phonons. The ultrahigh k in conjunction with its wide bandgap (6.2 electron volts) makes cBN a promising material for microelectronics thermal management, high-power electronics, and optoelectronics applications.",

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AU - Song, Bai

AU - Ravichandran, Navaneetha K.

AU - Zheng, Qiye

AU - Chen, Xi

AU - Lee, Hwijong

AU - Sun, Haoran

AU - Li, Sheng

AU - Gamage, Geethal Amila Gamage Udalamatta

AU - Tian, Fei

AU - Ding, Zhiwei

AU - Song, Qichen

AU - Rai, Akash

AU - Wu, Hanlin

AU - Koirala, Pawan

AU - Schmidt, Aaron J.

AU - Watanabe, Kenji

AU - Lv, Bing

AU - Ren, Zhifeng

AU - Shi, Li

AU - Cahill, David G.

AU - Taniguchi, Takashi

AU - Broido, David

AU - Chen, Gang

PY - 2020/1/31

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AB - Materials with high thermal conductivity (k) are of technological importance and fundamental interest. We grew cubic boron nitride (cBN) crystals with controlled abundance of boron isotopes and measured k greater than 1600 watts per meter-kelvin at room temperature in samples with enriched 10B or 11B. In comparison, we found that the isotope enhancement of k is considerably lower for boron phosphide and boron arsenide as the identical isotopic mass disorder becomes increasingly invisible to phonons. The ultrahigh k in conjunction with its wide bandgap (6.2 electron volts) makes cBN a promising material for microelectronics thermal management, high-power electronics, and optoelectronics applications.

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