Ultrahigh thermal conductivity in isotope-enriched cubic boron nitride

Ke Chen, Bai Song, Navaneetha K. Ravichandran, Qiye Zheng, Xi Chen, Hwijong Lee, Haoran Sun, Sheng Li, Geethal Amila Gamage Udalamatta Gamage, Fei Tian, Zhiwei Ding, Qichen Song, Akash Rai, Hanlin Wu, Pawan Koirala, Aaron J. Schmidt, Kenji Watanabe, Bing Lv, Zhifeng Ren, Li ShiDavid G. Cahill, Takashi Taniguchi, David Broido, Gang Chen

Research output: Contribution to journalArticlepeer-review


Materials with high thermal conductivity (k) are of technological importance and fundamental interest. We grew cubic boron nitride (cBN) crystals with controlled abundance of boron isotopes and measured k greater than 1600 watts per meter-kelvin at room temperature in samples with enriched 10B or 11B. In comparison, we found that the isotope enhancement of k is considerably lower for boron phosphide and boron arsenide as the identical isotopic mass disorder becomes increasingly invisible to phonons. The ultrahigh k in conjunction with its wide bandgap (6.2 electron volts) makes cBN a promising material for microelectronics thermal management, high-power electronics, and optoelectronics applications.

Original languageEnglish (US)
Pages (from-to)555-559
Number of pages5
Issue number6477
StatePublished - Jan 31 2020

ASJC Scopus subject areas

  • General


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