Ultrahigh-Frequency Performance of Submicrometer-Gate Ion-Implanted GaAs MESFET’s

G. W. Wang, Milton Feng, C. L. Lau, Thomas R. Lepkowski

Research output: Contribution to journalArticlepeer-review


Ion-implanted GaAs MESFET’s with gate lengths of 0.3 and 0.5 μm have been fabricated to study the high-frequency performance of short-gate GaAs MESFET’s. Excellent dc and microwave performances have been achieved with an emphasis on the reduction of effective gate length during device fabrication. From f1’s of 83 and 48 GHz for 0.3- and 0.5-μm gate devices, respectively, an electron velocity of 1.5 x 107 cm/s is estimated. An ft of 240 GHz is also projected for a 0.1-μm gate GaAs MESFET. These experimental results are comparable to those of the best HEMT’s reported and higher than those generally accepted for MESFET’s.

Original languageEnglish (US)
Pages (from-to)206-208
Number of pages3
JournalIEEE Electron Device Letters
Issue number5
StatePublished - May 1989
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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