A study of the high-frequency performance of short-gate ion-implanted GaAs MESFETs with gate lengths of 0.3 and 0.5 μm is discussed. Excellent DC and microwave performance have been achieved with an emphasis on the reduction of effective gate length during device fabrication. From ft of 83 and 48 GHz for 0.3-0.5-μm gate devices, respectively, an electron velocity of 1.5 × 107 cm/s is estimated. An ft of 240 GHz is also projected for a 0.1-μm-gate GaAs MESFET. These experimental results are believed to be comparable to those of the best HEMTs (high-electron-mobility transistors) reported and higher than those generally accepted for MESFETs.
|Original language||English (US)|
|Number of pages||3|
|Journal||Electron device letters|
|State||Published - 1992|
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