Ultrahigh-frequency performance of submicrometer-gate ion-implanted GaAs MESFET's

G. W. Wang, Milton Feng, C. L. Lau, C. Ito, Thomas R. Lepkowski

Research output: Contribution to journalArticle

Abstract

A study of the high-frequency performance of short-gate ion-implanted GaAs MESFETs with gate lengths of 0.3 and 0.5 μm is discussed. Excellent DC and microwave performance have been achieved with an emphasis on the reduction of effective gate length during device fabrication. From ft of 83 and 48 GHz for 0.3-0.5-μm gate devices, respectively, an electron velocity of 1.5 × 107 cm/s is estimated. An ft of 240 GHz is also projected for a 0.1-μm-gate GaAs MESFET. These experimental results are believed to be comparable to those of the best HEMTs (high-electron-mobility transistors) reported and higher than those generally accepted for MESFETs.

Original languageEnglish (US)
Pages (from-to)206-208
Number of pages3
JournalElectron device letters
Volumev
Issue numbern
StatePublished - 1992
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Wang, G. W., Feng, M., Lau, C. L., Ito, C., & Lepkowski, T. R. (1992). Ultrahigh-frequency performance of submicrometer-gate ion-implanted GaAs MESFET's. Electron device letters, v(n), 206-208.