Ultrahigh frequency operation of ion-implanted GaAs metal-semiconductor field-effect transistors

M. Feng; H. Kanber; V. K. Eu; E. Watkins; L. R. Hackett

doi:10.1063/1.94681

Ultrahigh frequency operation of ion-implanted GaAs metal-semiconductor field-effect transistors

M. Feng, H. Kanber, V. K. Eu, E. Watkins, L. R. Hackett

Research output: Contribution to journal › Article › peer-review

Abstract

High-performance, ion-implanted GaAs metal-semiconductor field-effect transistors for operation in the frequency range 10-60 GHz have demonstrated noise figures of 1.15 dB at 12 GHz and 1.63 dB at 18 GHz. A single-stage amplifier has demonstrated a noise figure of 2.8 dB with 8.3-dB associated gain at 30 GHz and a gain of 6 dB at 60 GHz.

Original language	English (US)
Pages (from-to)	231-233
Number of pages	3
Journal	Applied Physics Letters
Volume	44
Issue number	2
DOIs	https://doi.org/10.1063/1.94681
State	Published - 1984
Externally published	Yes

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Physics and Astronomy (miscellaneous)

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10.1063/1.94681

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abstract = "High-performance, ion-implanted GaAs metal-semiconductor field-effect transistors for operation in the frequency range 10-60 GHz have demonstrated noise figures of 1.15 dB at 12 GHz and 1.63 dB at 18 GHz. A single-stage amplifier has demonstrated a noise figure of 2.8 dB with 8.3-dB associated gain at 30 GHz and a gain of 6 dB at 60 GHz.",

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year = "1984",

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AU - Kanber, H.

AU - Eu, V. K.

AU - Watkins, E.

AU - Hackett, L. R.

PY - 1984

Y1 - 1984

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AB - High-performance, ion-implanted GaAs metal-semiconductor field-effect transistors for operation in the frequency range 10-60 GHz have demonstrated noise figures of 1.15 dB at 12 GHz and 1.63 dB at 18 GHz. A single-stage amplifier has demonstrated a noise figure of 2.8 dB with 8.3-dB associated gain at 30 GHz and a gain of 6 dB at 60 GHz.

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Ultrahigh frequency operation of ion-implanted GaAs metal-semiconductor field-effect transistors

Abstract

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