Abstract
Arsenide-based III-V microtubes are formed by a strain-induced self-rolling process. We report room-temperature photoluminescence characteristics of such microtubes with embedded GaAs quantumwell structure that is only 38 nm in total wall thickness.
| Original language | English (US) |
|---|---|
| Title of host publication | 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 |
| State | Published - 2009 |
| Event | 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 - Baltimore, MD, United States Duration: Jun 2 2009 → Jun 4 2009 |
Other
| Other | 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 |
|---|---|
| Country/Territory | United States |
| City | Baltimore, MD |
| Period | 6/2/09 → 6/4/09 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials