Abstract
Arsenide-based III-V microtubes are formed by a strain-induced self-rolling process. We report room-temperature photoluminescence characteristics of such microtubes with embedded GaAs quantum-well structure that is only 38 nm in total wall thickness.
| Original language | English (US) |
|---|---|
| Title of host publication | Conference on Lasers and Electro-Optics, CLEO 2009 |
| State | Published - 2009 |
| Event | Conference on Lasers and Electro-Optics, CLEO 2009 - Baltimore, MD, United States Duration: May 31 2009 → Jun 5 2009 |
Other
| Other | Conference on Lasers and Electro-Optics, CLEO 2009 |
|---|---|
| Country | United States |
| City | Baltimore, MD |
| Period | 5/31/09 → 6/5/09 |
ASJC Scopus subject areas
- Instrumentation
- Atomic and Molecular Physics, and Optics
Fingerprint Dive into the research topics of 'Ultra-thin-walled III-arsenide microtubes with embedded QW light emitters: Room temperature PL characteristics'. Together they form a unique fingerprint.
Cite this
Chun, I. S., Bassett, K., Challa, A., & Li, X. (2009). Ultra-thin-walled III-arsenide microtubes with embedded QW light emitters: Room temperature PL characteristics. In Conference on Lasers and Electro-Optics, CLEO 2009