Ultra-thin-walled III-arsenide microtubes with embedded QW light emitters: Room temperature PL characteristics

Ik Su Chun, Kevin Bassett, Archana Challa, Xiuling Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Arsenide-based III-V microtubes are formed by a strain-induced self-rolling process. We report room-temperature photoluminescence characteristics of such microtubes with embedded GaAs quantum-well structure that is only 38 nm in total wall thickness.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2009
StatePublished - 2009
EventConference on Lasers and Electro-Optics, CLEO 2009 - Baltimore, MD, United States
Duration: May 31 2009Jun 5 2009

Other

OtherConference on Lasers and Electro-Optics, CLEO 2009
CountryUnited States
CityBaltimore, MD
Period5/31/096/5/09

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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    Chun, I. S., Bassett, K., Challa, A., & Li, X. (2009). Ultra-thin-walled III-arsenide microtubes with embedded QW light emitters: Room temperature PL characteristics. In Conference on Lasers and Electro-Optics, CLEO 2009