Ultra-smooth dry etching of GaAs using a hydrogen plasma pretreatment

R. J. Shul, Kent D. Choquette, A. J. Howard, D. J. Rieger, C. A. DiRubio, R. S. Freund, R. C. Wetzel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have attained extremely smooth etched surfaces on GaAs using a hydrogen plasma pretreatment before etching. The resultant morphology exhibits smooth surfaces since the etching proceeds uniformly through the GaAs without micromasking effects arising from a nonuniform surface oxide. We report the effects of hydrogen plasma treatments before RIE of GaAs in two different reactors using a SiCl4 plasma. Optimization of H2 plasma pretreatments has produced improvements in RMS roughness greater than 1 order of magnitude (22.4 to 1.51 nm).

Original languageEnglish (US)
Title of host publicationDiagnostic Techniques for Semiconductor Materials Processing
PublisherPubl by Materials Research Society
Pages465-470
Number of pages6
ISBN (Print)1558992235
StatePublished - Jan 1 1994
Externally publishedYes
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 29 1993Dec 3 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume324
ISSN (Print)0272-9172

Other

OtherProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/29/9312/3/93

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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