@inproceedings{41c15f3003ed4ad8a16fa1ba518b668c,
title = "Ultra-smooth dry etching of GaAs using a hydrogen plasma pretreatment",
abstract = "We have attained extremely smooth etched surfaces on GaAs using a hydrogen plasma pretreatment before etching. The resultant morphology exhibits smooth surfaces since the etching proceeds uniformly through the GaAs without micromasking effects arising from a nonuniform surface oxide. We report the effects of hydrogen plasma treatments before RIE of GaAs in two different reactors using a SiCl4 plasma. Optimization of H2 plasma pretreatments has produced improvements in RMS roughness greater than 1 order of magnitude (22.4 to 1.51 nm).",
author = "Shul, {R. J.} and Choquette, {Kent D.} and Howard, {A. J.} and Rieger, {D. J.} and DiRubio, {C. A.} and Freund, {R. S.} and Wetzel, {R. C.}",
year = "1994",
language = "English (US)",
isbn = "1558992235",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "465--470",
booktitle = "Diagnostic Techniques for Semiconductor Materials Processing",
note = "Proceedings of the 1993 Fall Meeting of the Materials Research Society ; Conference date: 29-11-1993 Through 03-12-1993",
}