@inproceedings{d9c5ca0e5ffa4fb1a5d217fec6749bef,
title = "Ultra low power (<2 mW) noise performance of InGaP/GaAs HBT",
abstract = "The noise parameters of Npn InGaP/GaAs HBT devices are reported for an array of bias conditions from 2-18 GHz. A minimum noise figure of 0.8 dB with associated gain of 16 dB at 2 GHz was achieved at a collector bias of 0.83 mA and a collector-emitter voltage of 2 V. This was achieved by a device with emitter area of 3×10 μm2. A model is also presented that is used to compare measured and theoretical results. The low power consumption, high associated gain, low equivalent noise resistance, and variable optimum noise match coupled with an excellent degree of linearity makes the InGaP/GaAs HBT an ideal candidate for low noise amplifiers (2-6 GHz) with minimal power consumption.",
author = "Barlage, {D. W.} and Heins, {M. S.} and Mu, {J. H.} and Fresina, {M. T.} and Ahmari, {D. A.} and Hartman, {Q. J.} and Stillman, {G. E.} and M. Feng",
year = "1997",
doi = "10.1109/ISCS.1998.711728",
language = "English (US)",
isbn = "0780338839",
series = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "511--514",
editor = "Mike Melloch and Reed, {Mark A.}",
booktitle = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",
address = "United States",
note = "24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 ; Conference date: 08-09-1997 Through 11-09-1997",
}