Ultra low power (<2 mW) noise performance of InGaP/GaAs HBT

D. W. Barlage, M. S. Heins, J. H. Mu, M. T. Fresina, D. A. Ahmari, Q. J. Hartman, G. E. Stillman, M. Feng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The noise parameters of Npn InGaP/GaAs HBT devices are reported for an array of bias conditions from 2-18 GHz. A minimum noise figure of 0.8 dB with associated gain of 16 dB at 2 GHz was achieved at a collector bias of 0.83 mA and a collector-emitter voltage of 2 V. This was achieved by a device with emitter area of 3×10 μm2. A model is also presented that is used to compare measured and theoretical results. The low power consumption, high associated gain, low equivalent noise resistance, and variable optimum noise match coupled with an excellent degree of linearity makes the InGaP/GaAs HBT an ideal candidate for low noise amplifiers (2-6 GHz) with minimal power consumption.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997
EditorsMike Melloch, Mark A. Reed
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages511-514
Number of pages4
ISBN (Print)0780338839, 9780780338838
DOIs
StatePublished - Jan 1 1997
Event24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 - San Diego, United States
Duration: Sep 8 1997Sep 11 1997

Publication series

NameProceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Other

Other24th IEEE International Symposium on Compound Semiconductors, ISCS 1997
CountryUnited States
CitySan Diego
Period9/8/979/11/97

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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