Ultra Low-Noise Performance of 0.15-Micron Gate GaAs MESFET’s Made by Direct Ion Implantation for Low-Cost MMIC’s Applications

M. Feng, J. Laskar, K. Kruse, R. Neidhard

Research output: Contribution to journalArticle

Abstract

The high-speed and noise performance of 0.15-micron gate GaAs MESFET’s for microwave and millimeterwave IC applications is reported on. The best extrinsic fc is 109 GHz without correction for pad parasitics which is equivalent to an intrinsic ft of 134 GHz. The 0.15 × 200-micron gate GaAs MESFET achieved 0.6-dB noise figure with 17-dB associated gain at 10 GHz and 0.9-dB noise figure with 13-dB associated gain at 18 GHz. The measured noise figure and associated gain is the best reported performance for GaAs MESFET’s and comparable to the best noise/gain performance of HEMT’s and P-HEMT’s.

Original languageEnglish (US)
Pages (from-to)194-195
Number of pages2
JournalIEEE Microwave and Guided Wave Letters
Volume2
Issue number5
DOIs
StatePublished - May 1992

Fingerprint

Monolithic microwave integrated circuits
Noise figure
Ion implantation
low noise
ion implantation
field effect transistors
High electron mobility transistors
Costs
high electron mobility transistors
Microwaves
high speed
microwaves

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Ultra Low-Noise Performance of 0.15-Micron Gate GaAs MESFET’s Made by Direct Ion Implantation for Low-Cost MMIC’s Applications. / Feng, M.; Laskar, J.; Kruse, K.; Neidhard, R.

In: IEEE Microwave and Guided Wave Letters, Vol. 2, No. 5, 05.1992, p. 194-195.

Research output: Contribution to journalArticle

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