Ultra-high speed composition graded InGaAsSb/GaAsSb DHBTs with f T = 500 GHz grown by gas-source molecular beam epitaxy

Bing Ruey Wu, William Snodgrass, Walid Hafez, Milton Feng, K. Y. Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Graded InGaAsSb:C base double heterojunction bipolar transistors (DHBT) were grown on InP to enhance the electron transit time through the base region. A record high unity current gain frequency fT of 500 GHz is achieved in the DHBT with a 250Å thick InGaAsSb:C linear graded base.

Original languageEnglish (US)
Title of host publication2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings
Pages89-91
Number of pages3
StatePublished - 2006
Event2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings - Princeton, United States
Duration: May 7 2006May 11 2006

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
Volume2006
ISSN (Print)1092-8669

Other

Other2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings
Country/TerritoryUnited States
CityPrinceton
Period5/7/065/11/06

Keywords

  • Heterojunction bipolar transistors (HBTs)
  • Molecular beam epitaxy (MBE)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Ultra-high speed composition graded InGaAsSb/GaAsSb DHBTs with f T = 500 GHz grown by gas-source molecular beam epitaxy'. Together they form a unique fingerprint.

Cite this