TY - GEN
T1 - Ultra high frequency phononic crystal in silicon carbide
AU - Kuo, N.
AU - Gong, Songbin
AU - Piazza, G.
PY - 2011
Y1 - 2011
N2 - This work presents, for the first time, a novel fractal phononic crystal (PC) design in epitaxial cubic silicon carbide (3C-SiC) and experimentally demonstrates acoustic band gaps (ABGs) in the ultra high frequency (UHF) range. The unit cell consists of an air scatterer in a SiC host matrix. Unlike most conventional PC designs, either having circular holes or cylindrical pillars as the scattering sites, the shape of the fractal-like scatterer is formed by a center square hole with four repeating smaller squares at its corners. The fractal nature of this design enables opening phononic band gaps (PBGs) at higher operating frequencies than conventional designs, therefore attaining UHF operations with larger features. The micromachined SiC PBG structure exhibits two frequency stop bands in the 1 GHz range, centered at 990 MHz and 1.17 GHz with 10 % and 15.4 % gap-to-midgap ratio bandwidth, respectively.
AB - This work presents, for the first time, a novel fractal phononic crystal (PC) design in epitaxial cubic silicon carbide (3C-SiC) and experimentally demonstrates acoustic band gaps (ABGs) in the ultra high frequency (UHF) range. The unit cell consists of an air scatterer in a SiC host matrix. Unlike most conventional PC designs, either having circular holes or cylindrical pillars as the scattering sites, the shape of the fractal-like scatterer is formed by a center square hole with four repeating smaller squares at its corners. The fractal nature of this design enables opening phononic band gaps (PBGs) at higher operating frequencies than conventional designs, therefore attaining UHF operations with larger features. The micromachined SiC PBG structure exhibits two frequency stop bands in the 1 GHz range, centered at 990 MHz and 1.17 GHz with 10 % and 15.4 % gap-to-midgap ratio bandwidth, respectively.
KW - Acoustic Band Gap
KW - Fractal
KW - Phononic Band Gap
KW - Phononic Crystal
KW - Ultra High Frequency
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U2 - 10.1109/TRANSDUCERS.2011.5969703
DO - 10.1109/TRANSDUCERS.2011.5969703
M3 - Conference contribution
AN - SCOPUS:80052112267
SN - 9781457701573
T3 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
SP - 2486
EP - 2489
BT - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
T2 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Y2 - 5 June 2011 through 9 June 2011
ER -