Ultra-High Aspect Ratio InP Junctionless FinFETs by a Novel Wet Etching Method

Yi Song; Parsian K. Mohseni; Seung Hyun Kim; Jae Cheol Shin; Tatsumi Ishihara; Ilesanmi Adesida; Xiuling Li

doi:10.1109/LED.2016.2577046

Ultra-High Aspect Ratio InP Junctionless FinFETs by a Novel Wet Etching Method

Yi Song, Parsian K. Mohseni, Seung Hyun Kim, Jae Cheol Shin, Tatsumi Ishihara, Ilesanmi Adesida, Xiuling Li

Research output: Contribution to journal › Article › peer-review

Abstract

Junctionless FinFETs with an array of ultra-high aspect ratio (HAR) fins, enabled by inverse metal-assisted chemical etching, are developed to achieve high on-current per fin. The novel device fabrication process eliminates dry etching-induced plasma damage, high energy ion implantation damage, and subsequent high-temperature annealing thermal budget, ensuring interface quality between the high-k gate dielectric and the HAR fin channel. Indium phosphide junctionless FinFETs, of record HAR (as high as 50:1) fins, are demonstrated for the first time with excellent subthreshold slope (63 mV/dec) and ON/OFF ratio (3 × 10⁵).

Original language	English (US)
Article number	7485851
Pages (from-to)	970-973
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	8
DOIs	https://doi.org/10.1109/LED.2016.2577046
State	Published - Aug 2016

Keywords

FinFET
high aspect ratio
interface states
junctionless
metal-assisted chemicaletching
nanofabrication

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Online availability

10.1109/LED.2016.2577046

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title = "Ultra-High Aspect Ratio InP Junctionless FinFETs by a Novel Wet Etching Method",

abstract = "Junctionless FinFETs with an array of ultra-high aspect ratio (HAR) fins, enabled by inverse metal-assisted chemical etching, are developed to achieve high on-current per fin. The novel device fabrication process eliminates dry etching-induced plasma damage, high energy ion implantation damage, and subsequent high-temperature annealing thermal budget, ensuring interface quality between the high-k gate dielectric and the HAR fin channel. Indium phosphide junctionless FinFETs, of record HAR (as high as 50:1) fins, are demonstrated for the first time with excellent subthreshold slope (63 mV/dec) and ON/OFF ratio (3 × 105).",

keywords = "FinFET, high aspect ratio, interface states, junctionless, metal-assisted chemicaletching, nanofabrication",

author = "Yi Song and Mohseni, {Parsian K.} and Kim, {Seung Hyun} and Shin, {Jae Cheol} and Tatsumi Ishihara and Ilesanmi Adesida and Xiuling Li",

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doi = "10.1109/LED.2016.2577046",

language = "English (US)",

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AU - Song, Yi

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AU - Kim, Seung Hyun

AU - Shin, Jae Cheol

AU - Ishihara, Tatsumi

AU - Adesida, Ilesanmi

AU - Li, Xiuling

PY - 2016/8

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AB - Junctionless FinFETs with an array of ultra-high aspect ratio (HAR) fins, enabled by inverse metal-assisted chemical etching, are developed to achieve high on-current per fin. The novel device fabrication process eliminates dry etching-induced plasma damage, high energy ion implantation damage, and subsequent high-temperature annealing thermal budget, ensuring interface quality between the high-k gate dielectric and the HAR fin channel. Indium phosphide junctionless FinFETs, of record HAR (as high as 50:1) fins, are demonstrated for the first time with excellent subthreshold slope (63 mV/dec) and ON/OFF ratio (3 × 105).

KW - FinFET

KW - high aspect ratio

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KW - metal-assisted chemicaletching

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Ultra-High Aspect Ratio InP Junctionless FinFETs by a Novel Wet Etching Method

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