Ultra-dense hydrogen silsesquioxane (HSQ) structures on thin silicon nitride membranes

Sookyung Choi, Minjun Yan, Liang Wang, Ilesanmi Adesida

Research output: Contribution to journalArticle

Abstract

Ultra-dense nanometer-scale gratings (20 nm pitch) on thin silicon nitride (Si3N4) membrane substrates using hydrogen silsesquioxane (HSQ) resist have been fabricated. Scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) were performed to evaluate the pattern quality of the HSQ gratings. The results are compared with HSQ gratings fabricated on silicon substrates.

Original languageEnglish (US)
Pages (from-to)521-523
Number of pages3
JournalMicroelectronic Engineering
Volume86
Issue number4-6
DOIs
StatePublished - Apr 1 2009

Keywords

  • Electron-beam lithography (EBL)
  • Hydrogen silsesquioxane (HSQ)
  • Scanning transmission electron microscopy (STEM)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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