Ultra-dense hydrogen silsesquioxane (HSQ) structures on thin silicon nitride membranes

Sookyung Choi, Minjun Yan, Liang Wang, Ilesanmi Adesida

Research output: Contribution to journalArticlepeer-review


Ultra-dense nanometer-scale gratings (20 nm pitch) on thin silicon nitride (Si3N4) membrane substrates using hydrogen silsesquioxane (HSQ) resist have been fabricated. Scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) were performed to evaluate the pattern quality of the HSQ gratings. The results are compared with HSQ gratings fabricated on silicon substrates.

Original languageEnglish (US)
Pages (from-to)521-523
Number of pages3
JournalMicroelectronic Engineering
Issue number4-6
StatePublished - Apr 2009


  • Electron-beam lithography (EBL)
  • Hydrogen silsesquioxane (HSQ)
  • Scanning transmission electron microscopy (STEM)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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