Abstract
Silicon p+-i-n+ diode Mach-Zehnder electrooptic modulators having an ultra-compact length of 100 to 200 μm are presented. These devices exhibit high modulation efficiency, with a Vπ-L figure of merit of 0.36 V-mm. Optical modulation at data rates up to 10 Gb/s is demonstrated with low RF power consumption of only 5 pJ/bit.
Original language | English (US) |
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Pages (from-to) | 17106-17113 |
Number of pages | 8 |
Journal | Optics Express |
Volume | 15 |
Issue number | 25 |
DOIs | |
State | Published - Dec 12 2007 |
Externally published | Yes |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics