Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator

William M.J. Green; Michael J. Rooks; Lidija Sekaric; Yurii A. Vlasov

doi:10.1364/OE.15.017106

Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator

William M.J. Green, Michael J. Rooks, Lidija Sekaric, Yurii A. Vlasov

Research output: Contribution to journal › Article › peer-review

Abstract

Silicon p⁺-i-n⁺ diode Mach-Zehnder electrooptic modulators having an ultra-compact length of 100 to 200 μm are presented. These devices exhibit high modulation efficiency, with a V_π-L figure of merit of 0.36 V-mm. Optical modulation at data rates up to 10 Gb/s is demonstrated with low RF power consumption of only 5 pJ/bit.

Original language	English (US)
Pages (from-to)	17106-17113
Number of pages	8
Journal	Optics Express
Volume	15
Issue number	25
DOIs	https://doi.org/10.1364/OE.15.017106
State	Published - Dec 12 2007
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1364/OE.15.017106

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abstract = "Silicon p+-i-n+ diode Mach-Zehnder electrooptic modulators having an ultra-compact length of 100 to 200 μm are presented. These devices exhibit high modulation efficiency, with a Vπ-L figure of merit of 0.36 V-mm. Optical modulation at data rates up to 10 Gb/s is demonstrated with low RF power consumption of only 5 pJ/bit.",

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AU - Rooks, Michael J.

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PY - 2007/12/12

Y1 - 2007/12/12

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AB - Silicon p+-i-n+ diode Mach-Zehnder electrooptic modulators having an ultra-compact length of 100 to 200 μm are presented. These devices exhibit high modulation efficiency, with a Vπ-L figure of merit of 0.36 V-mm. Optical modulation at data rates up to 10 Gb/s is demonstrated with low RF power consumption of only 5 pJ/bit.

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Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator

Abstract

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