TY - GEN
T1 - UHV-STM study of single-walled carbon nanotubes applied to the GaAs(110) and InAs(110) surfaces
AU - Ruppalt, L. B.
AU - Albrecht, P. M.
AU - Lyding, J. W.
PY - 2006/3
Y1 - 2006/3
N2 - In this study, ultrahigh vacuum (UHV) cross-sectional scanning tunneling microscopy (STM) and spectroscopy (STS) were used to probe the physical and electrical properties of individual single-walled carbon nanotubes (SWNTs) deposited onto semiconducting GaAs and InAs platforms. Isolated nanotubes were applied to the III-V(110) surface in situ via an UHV-compatible dry contact transfer (DCT) process. Subsequent STM observations indicate a substrate-dependent SWNT orientation, with individual nanotubes exhibiting a tendency to align in the < 1̄10 > direction, parallel to surface sublattice rows, while STS measurements confirm the Type I and Type II energy band alignments of the GaAs/SWNT and InAs/SWNT systems, respectively. Additionally, the electronic character of a naturally occurring intramolecular semiconducting/metallic SWNT junction is profiled.
AB - In this study, ultrahigh vacuum (UHV) cross-sectional scanning tunneling microscopy (STM) and spectroscopy (STS) were used to probe the physical and electrical properties of individual single-walled carbon nanotubes (SWNTs) deposited onto semiconducting GaAs and InAs platforms. Isolated nanotubes were applied to the III-V(110) surface in situ via an UHV-compatible dry contact transfer (DCT) process. Subsequent STM observations indicate a substrate-dependent SWNT orientation, with individual nanotubes exhibiting a tendency to align in the < 1̄10 > direction, parallel to surface sublattice rows, while STS measurements confirm the Type I and Type II energy band alignments of the GaAs/SWNT and InAs/SWNT systems, respectively. Additionally, the electronic character of a naturally occurring intramolecular semiconducting/metallic SWNT junction is profiled.
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U2 - 10.1051/jp4:2006132007
DO - 10.1051/jp4:2006132007
M3 - Conference contribution
AN - SCOPUS:33744932167
SN - 2868839185
SN - 9782868839183
T3 - Journal De Physique. IV : JP
SP - 31
EP - 34
BT - Proceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
T2 - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
Y2 - 3 July 2005 through 8 July 2005
ER -