UHV-STM study of single-walled carbon nanotubes applied to the GaAs(110) and InAs(110) surfaces

L. B. Ruppalt, P. M. Albrecht, Joseph W Lyding

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, ultrahigh vacuum (UHV) cross-sectional scanning tunneling microscopy (STM) and spectroscopy (STS) were used to probe the physical and electrical properties of individual single-walled carbon nanotubes (SWNTs) deposited onto semiconducting GaAs and InAs platforms. Isolated nanotubes were applied to the III-V(110) surface in situ via an UHV-compatible dry contact transfer (DCT) process. Subsequent STM observations indicate a substrate-dependent SWNT orientation, with individual nanotubes exhibiting a tendency to align in the < 1̄10 > direction, parallel to surface sublattice rows, while STS measurements confirm the Type I and Type II energy band alignments of the GaAs/SWNT and InAs/SWNT systems, respectively. Additionally, the electronic character of a naturally occurring intramolecular semiconducting/metallic SWNT junction is profiled.

Original languageEnglish (US)
Title of host publicationProceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
Pages31-34
Number of pages4
DOIs
StatePublished - Mar 1 2006
EventICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces - Aix-en-Provence, France
Duration: Jul 3 2005Jul 8 2005

Publication series

NameJournal De Physique. IV : JP
Volume132
ISSN (Print)1155-4339
ISSN (Electronic)1764-7177

Other

OtherICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
CountryFrance
CityAix-en-Provence
Period7/3/057/8/05

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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