TY - JOUR
T1 - UHV STM nanofabrication
T2 - Progress, technology spin-offs, and challenges
AU - Lyding, Joseph W.
N1 - Funding Information:
Manuscript received November 30, 1996; revised January 31, 1997. This work was supported by the Office of Naval Research URI N00014-92-J-1519 and by the Beckman Institute for Advanced Science and Technology at the University of Illinois.
PY - 1997
Y1 - 1997
N2 - A brief review of scanned probe nanofabrication is presented followed by an in-depth discussion of ultrahigh vacuum (UHV) scanning tunneling microscope (STM) nanofabrication on hydrogen passivated silicon surfaces. In this latter case the UHV STM functions as a nanolithography tool by selectively desorbing hydrogen from silicon surfaces. Patterns of clean Si, down to atomic dimensions, are achieved as well as detailed information about the H-desorption mechanisms. At higher sample voltages direct electron stimulated desorption occurs, whereas, at lower voltages, vibrational heating of the Si-H bond leads to desorption. The chemical contrast bet\veen clean and H-passivated silicon enables a wide variety of spatially selective nanoscale chemical reactions. Results are presented in which these templates are used for selective oxidation, nitridation, and metallization by chemical vapor deposition. An unexpected byproduct of this research was the discovery that deuterium is about two orders of magnitude more difficult to desorb from silicon than hydrogen. This served as the basis for the idea of treating CMOS transistors with deuterium to reduce their susceptibility to hot carrier degradation effects. Tests have now shown that the lifetimes of CMOS transistors increase by factors of 10 to 50 when deuterium treatment is substituted for the traditional hydrogen processing.
AB - A brief review of scanned probe nanofabrication is presented followed by an in-depth discussion of ultrahigh vacuum (UHV) scanning tunneling microscope (STM) nanofabrication on hydrogen passivated silicon surfaces. In this latter case the UHV STM functions as a nanolithography tool by selectively desorbing hydrogen from silicon surfaces. Patterns of clean Si, down to atomic dimensions, are achieved as well as detailed information about the H-desorption mechanisms. At higher sample voltages direct electron stimulated desorption occurs, whereas, at lower voltages, vibrational heating of the Si-H bond leads to desorption. The chemical contrast bet\veen clean and H-passivated silicon enables a wide variety of spatially selective nanoscale chemical reactions. Results are presented in which these templates are used for selective oxidation, nitridation, and metallization by chemical vapor deposition. An unexpected byproduct of this research was the discovery that deuterium is about two orders of magnitude more difficult to desorb from silicon than hydrogen. This served as the basis for the idea of treating CMOS transistors with deuterium to reduce their susceptibility to hot carrier degradation effects. Tests have now shown that the lifetimes of CMOS transistors increase by factors of 10 to 50 when deuterium treatment is substituted for the traditional hydrogen processing.
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U2 - 10.1109/5.573743
DO - 10.1109/5.573743
M3 - Article
AN - SCOPUS:0031123838
SN - 0018-9219
VL - 85
SP - 589
EP - 600
JO - Proceedings of the Institute of Radio Engineers
JF - Proceedings of the Institute of Radio Engineers
IS - 4
ER -