UHV-STM nanofabrication on silicon

Peter M. Albrecht, Laura B. Ruppalt, Joseph W. Lyding

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

The ultrahigh vacuum scanning tunneling microscope (UHV-STM) offers intriguing opportunities to explore the integration of novel nanotechnologies with existing semiconductor platforms. This chapter describes the development of the atomic-resolution hydrogen resist technique and its application to the templated self-assembly of molecular systems on silicon. The observation of a giant isotope effect in STM hydrogen desorption experiments has led to the use of deuterium to retard hot-carrier degradation in CMOS transistor technology. We have also explored the integration of carbon nanotubes with silicon and the III-V compound semiconductors. This has been facilitated by the development of the dry contact transfer (DCT) technique that enables atomically clean nanotube/substrate systems to be achieved, even for highly reactive surfaces like atomically clean silicon.

Original languageEnglish (US)
Title of host publicationScanning Probe Microscopy
PublisherSpringer New York
Pages880-905
Number of pages26
Volume2
ISBN (Print)0387286675, 9780387286679
DOIs
StatePublished - Dec 1 2007

ASJC Scopus subject areas

  • Materials Science(all)
  • Chemistry(all)

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    Albrecht, P. M., Ruppalt, L. B., & Lyding, J. W. (2007). UHV-STM nanofabrication on silicon. In Scanning Probe Microscopy (Vol. 2, pp. 880-905). Springer New York. https://doi.org/10.1007/978-0-387-28668-6_33