UHV-STM nanofabrication on silicon

Peter M. Albrecht, Laura B. Ruppalt, Joseph W. Lyding

Research output: Chapter in Book/Report/Conference proceedingChapter


The ultrahigh vacuum scanning tunneling microscope (UHV-STM) offers intriguing opportunities to explore the integration of novel nanotechnologies with existing semiconductor platforms. This chapter describes the development of the atomic-resolution hydrogen resist technique and its application to the templated self-assembly of molecular systems on silicon. The observation of a giant isotope effect in STM hydrogen desorption experiments has led to the use of deuterium to retard hot-carrier degradation in CMOS transistor technology. We have also explored the integration of carbon nanotubes with silicon and the III-V compound semiconductors. This has been facilitated by the development of the dry contact transfer (DCT) technique that enables atomically clean nanotube/substrate systems to be achieved, even for highly reactive surfaces like atomically clean silicon.

Original languageEnglish (US)
Title of host publicationScanning Probe Microscopy
PublisherSpringer New York
Number of pages26
ISBN (Print)0387286675, 9780387286679
StatePublished - Dec 1 2007

ASJC Scopus subject areas

  • Materials Science(all)
  • Chemistry(all)

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    Albrecht, P. M., Ruppalt, L. B., & Lyding, J. W. (2007). UHV-STM nanofabrication on silicon. In Scanning Probe Microscopy (Vol. 2, pp. 880-905). Springer New York. https://doi.org/10.1007/978-0-387-28668-6_33