UHV-STM nanofabrication on silicon

The ultrahigh vacuum scanning tunneling microscope (UHV-STM) offers intriguing opportunities to explore the integration of novel nanotechnologies with existing semiconductor platforms. This chapter describes the development of the atomic-resolution hydrogen resist technique and its application to the templated self-assembly of molecular systems on silicon. The observation of a giant isotope effect in STM hydrogen desorption experiments has led to the use of deuterium to retard hot-carrier degradation in CMOS transistor technology. We have also explored the integration of carbon nanotubes with silicon and the III-V compound semiconductors. This has been facilitated by the development of the dry contact transfer (DCT) technique that enables atomically clean nanotube/substrate systems to be achieved, even for highly reactive surfaces like atomically clean silicon.