Type-it GaAsSb/InP DHBTs with record fT = 670 GHz and simultaneous fT, fMAX > 400 GHz

William Snodgrass; Bing Ruey Wu; K. Y. Cheng; Milton Feng

doi:10.1109/IEDM.2007.4419031

Type-it GaAsSb/InP DHBTs with record f_T = 670 GHz and simultaneous f_T, f_MAX > 400 GHz

William Snodgrass, Bing Ruey Wu, K. Y. Cheng, Milton Feng

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Type-II GaAsSb/InP double-HBTs (DHBTs) with a 20 nm base and 60 nm collector exhibit record transistor performance with f_T = 670 GHz and off-state collector-emitter breakdown voltage of 3.2 V. Similar devices with a 30 nm base and 100 nm collector achieve simultaneous f_T = 480 GHz and f_MAX = 420 GHZ with 4.3 V breakdown voltage.

Original language	English (US)
Article number	4419031
Pages (from-to)	663-666
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/IEDM.2007.4419031
State	Published - 2007
Event	2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States Duration: Dec 10 2007 → Dec 12 2007

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Online availability

10.1109/IEDM.2007.4419031

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Cite this

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title = "Type-it GaAsSb/InP DHBTs with record fT = 670 GHz and simultaneous fT, fMAX > 400 GHz",

abstract = "Type-II GaAsSb/InP double-HBTs (DHBTs) with a 20 nm base and 60 nm collector exhibit record transistor performance with fT = 670 GHz and off-state collector-emitter breakdown voltage of 3.2 V. Similar devices with a 30 nm base and 100 nm collector achieve simultaneous fT = 480 GHz and fMAX = 420 GHZ with 4.3 V breakdown voltage.",

author = "William Snodgrass and Wu, {Bing Ruey} and Cheng, {K. Y.} and Milton Feng",

year = "2007",

doi = "10.1109/IEDM.2007.4419031",

language = "English (US)",

pages = "663--666",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2007 IEEE International Electron Devices Meeting, IEDM ; Conference date: 10-12-2007 Through 12-12-2007",

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T1 - Type-it GaAsSb/InP DHBTs with record fT = 670 GHz and simultaneous fT, fMAX > 400 GHz

AU - Snodgrass, William

AU - Wu, Bing Ruey

AU - Cheng, K. Y.

AU - Feng, Milton

PY - 2007

Y1 - 2007

N2 - Type-II GaAsSb/InP double-HBTs (DHBTs) with a 20 nm base and 60 nm collector exhibit record transistor performance with fT = 670 GHz and off-state collector-emitter breakdown voltage of 3.2 V. Similar devices with a 30 nm base and 100 nm collector achieve simultaneous fT = 480 GHz and fMAX = 420 GHZ with 4.3 V breakdown voltage.

AB - Type-II GaAsSb/InP double-HBTs (DHBTs) with a 20 nm base and 60 nm collector exhibit record transistor performance with fT = 670 GHz and off-state collector-emitter breakdown voltage of 3.2 V. Similar devices with a 30 nm base and 100 nm collector achieve simultaneous fT = 480 GHz and fMAX = 420 GHZ with 4.3 V breakdown voltage.

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JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

M1 - 4419031

T2 - 2007 IEEE International Electron Devices Meeting, IEDM

Y2 - 10 December 2007 through 12 December 2007

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