Type-it GaAsSb/InP DHBTs with record fT = 670 GHz and simultaneous fT, fMAX > 400 GHz

William Snodgrass, Bing Ruey Wu, K. Y. Cheng, Milton Feng

Research output: Contribution to journalConference articlepeer-review


Type-II GaAsSb/InP double-HBTs (DHBTs) with a 20 nm base and 60 nm collector exhibit record transistor performance with fT = 670 GHz and off-state collector-emitter breakdown voltage of 3.2 V. Similar devices with a 30 nm base and 100 nm collector achieve simultaneous fT = 480 GHz and fMAX = 420 GHZ with 4.3 V breakdown voltage.

Original languageEnglish (US)
Article number4419031
Pages (from-to)663-666
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
StatePublished - Dec 1 2007
Event2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States
Duration: Dec 10 2007Dec 12 2007

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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