The radiative recombination in the base layer of Type-II InP/GaAsSb/InP double heterojunction bipolar light-emitting transistor (HBLET) operating in the common-emitter configuration was discussed. It was found that the typical current gain for a 120×120 μm 2 emitter area of the HBLET was 38. It was observed that the optical emission wavelength from a 30 nm GaAs 0.51Sb 0.49 base was centered at λ peak = 1600nm. The three-port operation of the Type-II HBLET with simultaneously an amplified electrical output and an optical output with signal modulation was also elaborated.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)