Type-II GaAsSb/InP heterojunction bipolar light-emitting transistor

M. Feng, N. Holonyak, B. Chu-Kung, G. Walter, R. Chan

Research output: Contribution to journalArticlepeer-review


The radiative recombination in the base layer of Type-II InP/GaAsSb/InP double heterojunction bipolar light-emitting transistor (HBLET) operating in the common-emitter configuration was discussed. It was found that the typical current gain for a 120×120 μm 2 emitter area of the HBLET was 38. It was observed that the optical emission wavelength from a 30 nm GaAs 0.51Sb 0.49 base was centered at λ peak = 1600nm. The three-port operation of the Type-II HBLET with simultaneously an amplified electrical output and an optical output with signal modulation was also elaborated.

Original languageEnglish (US)
Pages (from-to)4792-4794
Number of pages3
JournalApplied Physics Letters
Issue number23
StatePublished - Jun 7 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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