Abstract
The radiative recombination in the base layer of Type-II InP/GaAsSb/InP double heterojunction bipolar light-emitting transistor (HBLET) operating in the common-emitter configuration was discussed. It was found that the typical current gain for a 120×120 μm 2 emitter area of the HBLET was 38. It was observed that the optical emission wavelength from a 30 nm GaAs 0.51Sb 0.49 base was centered at λ peak = 1600nm. The three-port operation of the Type-II HBLET with simultaneously an amplified electrical output and an optical output with signal modulation was also elaborated.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 4792-4794 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 84 |
| Issue number | 23 |
| DOIs | |
| State | Published - Jun 7 2004 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)