Type-ii dhbts microwave characterization and metallization issues

Kuang Yu Cheng, Milton Feng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A process issue of sub-micron heterojunction bipolar transistors fabrication is described. The metal short occurred during metallization of emitter contact and succeeding wet etch is a major failure mechanism. We present the designs of experiment to identify and solve the problem. The microwave and DC performance of sub-micron Type-II DHBTs is demonstrated.

Original languageEnglish (US)
Title of host publication2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011
StatePublished - Dec 1 2011
Event2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011 - Palm Springs, CA, United States
Duration: May 16 2011May 19 2011

Publication series

Name2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011

Other

Other2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011
CountryUnited States
CityPalm Springs, CA
Period5/16/115/19/11

Keywords

  • Electron beam lithography
  • Heterojunction bipolar transistor
  • Indium phosphide

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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