Two‐dimensional simulation of quantum well lasers

G. Hugh Song, Karl Hess, Thomas Kerkhoven, Umberto Ravaioli

Research output: Contribution to journalArticlepeer-review


A versatile two‐dimensional simulator for various types of semiconductor lasers for both steady state and transients has been developed. The simulator is capable of spectral analysis of quantum‐well semiconductor lasers, such as gain‐spectrum analysis, as well as analysis of the two‐dimensional current flow and optical intensity patterns. The simulator is based on the drift‐diffusion model with full Fermi‐Dirac statistics for the transport equations as well as for the Poisson equation. Simulation of the thermionic emission current is required at the abrupt heterointerfaces of the quantum well. For the spectral analysis of quantum‐well lasers, we have used the photon rate equation for each Fabry‐Perot mode. For the optical intensity pattern, we have solved the two‐dimensional Helmholtz eigenvalue equation using the subspace iteration method. The transient simulation is done by the full backward‐Euler method in conjunction with the full Newton approach for the entire semiconductor equations. To demonstrate the simulator, a model GaAs‐AIGaAs graded‐index‐separate‐confinement‐heterostructure buried‐quantum‐well laser is analyzed.

Original languageEnglish (US)
Pages (from-to)375-381
Number of pages7
JournalEuropean Transactions on Telecommunications
Issue number4
StatePublished - 1990

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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