Two terminal light emitting and lasing devices and methods

Nick Holonyak (Inventor), Gabriel Walter (Inventor), Milton Feng (Inventor)

Research output: Patent

Abstract

A method for producing light emission from a semiconductor structure, including the following steps: providing a semiconductor structure that includes a first semiconductor junction between an emitter region of a first conductivity type and a base region of a second conductivity type opposite to that of the first conductivity type, and a second semiconductor junction between the base region and a drain region; providing, within the base region, a region exhibiting quantum size effects; providing an emitter electrode coupled with the emitter region; providing a base/drain electrode coupled with the base region and the drain region; and applying signals with respect to the emitter and base/drain electrodes to obtain light emission from the semiconductor structure.
Original languageEnglish (US)
U.S. patent number8675703
Filing date1/7/10
StatePublished - Mar 18 2014

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