Two-dimensional simulator for semiconductor lasers

G. Hugh Song, Karl Hess, Thomas Kerkhoven, Umberto Ravaioli

Research output: Contribution to journalConference article

Abstract

A versatile two-dimensional simulator for continuous-wave semiconductor lasers has been developed. The simulator is capable of spectral analysis of quantum-well semiconductor lasers, such as gain-spectrum analysis, as well as analysis of the two-dimensional current flow and optical intensity pattern. The simulator is also capable of computing the internal two-dimensional temperature distribution of the laser. To develop the simulator, the authors have included a heat transfer equation for optoelectronic semiconductor devices and have developed a modified Scharfetter-Gummel algorithm which can solve the carrier-continuity equations with the temperature as an independent variable. They also have used the accurate photon rate equation for each Fabry-Perot mode. For the optical intensity pattern, they have directly solved the two-dimensional Helmholtz eigenvalue equation using the simultaneous iteration method. To demonstrate the simulator, a model graded-index separate-confinement-heterostructure buried-quantum-well laser is analyzed.

Original languageEnglish (US)
Pages (from-to)143-146
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - Dec 1 1989
Event1989 International Electron Devices Meeting - Technical Digest - Washington, DC, USA
Duration: Dec 3 1989Dec 6 1989

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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