Two dimensional full band, ensemble Monte Carlo simulation of wutzite GaN static induction transistors (SITs)

Bao Zeng Guo, Rong Xia Sun, Umberto Ravaioli

Research output: Contribution to journalArticlepeer-review

Abstract

We present the calculated results of DC and AC characteristics of wurtzite GaN static induction transistor by two dimensional full band, ensemble Monte Carlo simulation. The gate length of SIT is 0.13 micron and the distance between source and drain is 0.5 micron. We obtained the output characteristics, transconductance and current cutoff frequency characteristics of SIT by the Monte Carlo simulation. The maximum transconductance is 140 mS/mm at a gate-source voltage of -1.5 V, and the maximum current cutoff frequency is 123 GHz at a drain-source current of 3.15 A/cm. The calculated results indicates that wurtzite GaN SITs have a potential for applications in high power and high frequency.

Original languageEnglish (US)
Pages (from-to)1121-1124
Number of pages4
JournalTien Tzu Hsueh Pao/Acta Electronica Sinica
Volume31
Issue number8
StatePublished - Aug 1 2003

Keywords

  • Compound semiconductor
  • GaN
  • Monte Carlo simulation
  • Static induction transistor

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Two dimensional full band, ensemble Monte Carlo simulation of wutzite GaN static induction transistors (SITs)'. Together they form a unique fingerprint.

Cite this