Two dimensional full band, ensemble monte carlo simulation of wurtzite gan mesfets

Baozeng Guo, Umberto Ravaioli, Dengyuan Song

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We performed a two-dimensional full band, ensemble Monte Carlo simulation of a GaN metal-semiconductor field effect transistor (MESFET). The substrate is the wurtzite n-GaN with a background doping density 3×1017cm-3 and 0, 1 μm thick. The doping concentration of both source and drain is 2×1019cm-3. Au is assumed for the gate material. The Schottky contacts are formed between Au and wurtzite GaN. The Schottky barrier height of Au/GaN is assumed to be 0.98eV. The gate is 0.1μm length, and the space between source and drain is 0.4μm. The characteristics of the drain current Id versus drain-source voltage VDS for gate-source voltages varying from 0-6V in IV step is obtained by Monte Carlo simulations. At VDS=15V and VGS=0V, The drain current Id is 5.03A/cm, which is higher value. The transconductance Gm versus VGs characteristics are also analyzed by Monte Carlo simulations. The Gm-VGS curve is bell shaped and the maximum Gm is 112 ms/mm at VDS=15V and VGS=1.5V. The current gain cutoff frequency fT is 98 GHz at VDS=15 V and VGS=0V.

Original languageEnglish (US)
Title of host publication2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
EditorsMichael Gal
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages87-90
Number of pages4
ISBN (Electronic)0780375718
DOIs
StatePublished - Jan 1 2002
EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia
Duration: Dec 11 2002Dec 13 2002

Publication series

NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Volume2002-January

Other

OtherConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
CountryAustralia
CitySydney
Period12/11/0212/13/02

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Guo, B., Ravaioli, U., & Song, D. (2002). Two dimensional full band, ensemble monte carlo simulation of wurtzite gan mesfets. In M. Gal (Ed.), 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings (pp. 87-90). [1237199] (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD; Vol. 2002-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COMMAD.2002.1237199