Two dimensional full band, ensemble monte carlo simulation of wurtzite gan mesfets

Baozeng Guo; Umberto Ravaioli; Dengyuan Song

doi:10.1109/COMMAD.2002.1237199

Two dimensional full band, ensemble monte carlo simulation of wurtzite gan mesfets

Baozeng Guo, Umberto Ravaioli, Dengyuan Song

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We performed a two-dimensional full band, ensemble Monte Carlo simulation of a GaN metal-semiconductor field effect transistor (MESFET). The substrate is the wurtzite n-GaN with a background doping density 3×10¹⁷cm^-3 and 0, 1 μm thick. The doping concentration of both source and drain is 2×10¹⁹cm^-3. Au is assumed for the gate material. The Schottky contacts are formed between Au and wurtzite GaN. The Schottky barrier height of Au/GaN is assumed to be 0.98eV. The gate is 0.1μm length, and the space between source and drain is 0.4μm. The characteristics of the drain current I_d versus drain-source voltage VDS for gate-source voltages varying from 0-6V in IV step is obtained by Monte Carlo simulations. At V_DS=15V and V_GS=0V, The drain current I_d is 5.03A/cm, which is higher value. The transconductance G_m versus V_Gs characteristics are also analyzed by Monte Carlo simulations. The G_m-V_GS curve is bell shaped and the maximum G_m is 112 ms/mm at V_DS=15V and V_GS=1.5V. The current gain cutoff frequency f_T is 98 GHz at V_DS=15 V and V_GS=0V.

Original language	English (US)
Title of host publication	2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
Editors	Michael Gal
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	87-90
Number of pages	4
ISBN (Electronic)	0780375718
DOIs	https://doi.org/10.1109/COMMAD.2002.1237199
State	Published - 2002
Event	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia Duration: Dec 11 2002 → Dec 13 2002

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Volume	2002-January

Other

Other	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
Country/Territory	Australia
City	Sydney
Period	12/11/02 → 12/13/02

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Online availability

10.1109/COMMAD.2002.1237199

Library availability

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Guo, B., Ravaioli, U., & Song, D. (2002). Two dimensional full band, ensemble monte carlo simulation of wurtzite gan mesfets. In M. Gal (Ed.), 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings (pp. 87-90). Article 1237199 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD; Vol. 2002-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COMMAD.2002.1237199

Two dimensional full band, ensemble monte carlo simulation of wurtzite gan mesfets. / Guo, Baozeng; Ravaioli, Umberto; Song, Dengyuan.
2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. ed. / Michael Gal. Institute of Electrical and Electronics Engineers Inc., 2002. p. 87-90 1237199 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD; Vol. 2002-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Guo, B, Ravaioli, U & Song, D 2002, Two dimensional full band, ensemble monte carlo simulation of wurtzite gan mesfets. in M Gal (ed.), 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings., 1237199, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, vol. 2002-January, Institute of Electrical and Electronics Engineers Inc., pp. 87-90, Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002, Sydney, Australia, 12/11/02. https://doi.org/10.1109/COMMAD.2002.1237199

Guo B, Ravaioli U, Song D. Two dimensional full band, ensemble monte carlo simulation of wurtzite gan mesfets. In Gal M, editor, 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2002. p. 87-90. 1237199. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2002.1237199

Guo, Baozeng ; Ravaioli, Umberto ; Song, Dengyuan. / Two dimensional full band, ensemble monte carlo simulation of wurtzite gan mesfets. 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. editor / Michael Gal. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 87-90 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

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abstract = "We performed a two-dimensional full band, ensemble Monte Carlo simulation of a GaN metal-semiconductor field effect transistor (MESFET). The substrate is the wurtzite n-GaN with a background doping density 3×1017cm-3 and 0, 1 μm thick. The doping concentration of both source and drain is 2×1019cm-3. Au is assumed for the gate material. The Schottky contacts are formed between Au and wurtzite GaN. The Schottky barrier height of Au/GaN is assumed to be 0.98eV. The gate is 0.1μm length, and the space between source and drain is 0.4μm. The characteristics of the drain current Id versus drain-source voltage VDS for gate-source voltages varying from 0-6V in IV step is obtained by Monte Carlo simulations. At VDS=15V and VGS=0V, The drain current Id is 5.03A/cm, which is higher value. The transconductance Gm versus VGs characteristics are also analyzed by Monte Carlo simulations. The Gm-VGS curve is bell shaped and the maximum Gm is 112 ms/mm at VDS=15V and VGS=1.5V. The current gain cutoff frequency fT is 98 GHz at VDS=15 V and VGS=0V.",

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AB - We performed a two-dimensional full band, ensemble Monte Carlo simulation of a GaN metal-semiconductor field effect transistor (MESFET). The substrate is the wurtzite n-GaN with a background doping density 3×1017cm-3 and 0, 1 μm thick. The doping concentration of both source and drain is 2×1019cm-3. Au is assumed for the gate material. The Schottky contacts are formed between Au and wurtzite GaN. The Schottky barrier height of Au/GaN is assumed to be 0.98eV. The gate is 0.1μm length, and the space between source and drain is 0.4μm. The characteristics of the drain current Id versus drain-source voltage VDS for gate-source voltages varying from 0-6V in IV step is obtained by Monte Carlo simulations. At VDS=15V and VGS=0V, The drain current Id is 5.03A/cm, which is higher value. The transconductance Gm versus VGs characteristics are also analyzed by Monte Carlo simulations. The Gm-VGS curve is bell shaped and the maximum Gm is 112 ms/mm at VDS=15V and VGS=1.5V. The current gain cutoff frequency fT is 98 GHz at VDS=15 V and VGS=0V.

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Two dimensional full band, ensemble monte carlo simulation of wurtzite gan mesfets

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