TY - JOUR
T1 - Two-dimensional 8 × 8 photoreceiver array and VCSEL drivers for high-throughput optical data links
AU - Hietala, V. M.
AU - Chun, C.
AU - Laskar, J.
AU - Choquette, K. D.
AU - Geib, K. M.
AU - Allerman, A. A.
AU - Hindi, J. J.
N1 - Funding Information:
Manuscript received January 15, 2001; revised April 12, 2001. This work was supported by Sandia National Laboratories under Contract DE-AC04-94AL85000. V. M. Hietala was with Sandia National Laboratories, Albuquerque, NM 87185 USA. He is now with Quellan, Inc., Atlanta, GA 30318 USA (e-mail: [email protected]). C. Chun was with the Georgia Institute of Technology, Atlanta, GA 30332 USA. He is now with RF-Solutions, Inc., Atlanta, GA 30318 USA. J. Laskar is with the Georgia Institute of Technology, Atlanta, GA 30332 USA. K. D. Choquette was with Sandia National Laboratories, Albuquerque, NM 87185 USA. He is now with the Electrical and Computer Engineering Department, University of Illinois, Urbana, IL 61801 USA. K. M. Geib and A. A. Allerman are with Sandia National Laboratories, Albuquerque, NM 87185 USA. J. J. Hindi was with Sandia National Laboratories, Albquerque, NM 87185 USA. She is now with Cielo Communications, Broomfield, CO 80021 USA. Publisher Item Identifier S 0018-9200(01)06103-0.
PY - 2001/9
Y1 - 2001/9
N2 - Two custom GaAs integrated circuits (ICs) have been developed for enabling vertical cavity surface emitting laser (VCSEL) arrays to be used for high throughput spatial division multiplexed (SDM) optical data links. A 16-channel driver IC was developed to drive the VCSEL array and an 8 × 8 monolithic photoreceiver, which spatially matches the VCSEL array, was developed for receive. Both of these circuits were fabricated in a standard commercial GaAs MESFET process with parasitic photodetectors used for the photoreceivers. Power dissipation and circuit size were primary design challenges for both circuits. The present 8 × 8 array size along with an estimated usable channel speed of 1 Gb/s allows for an aggregate throughput of 64 Gb/s.
AB - Two custom GaAs integrated circuits (ICs) have been developed for enabling vertical cavity surface emitting laser (VCSEL) arrays to be used for high throughput spatial division multiplexed (SDM) optical data links. A 16-channel driver IC was developed to drive the VCSEL array and an 8 × 8 monolithic photoreceiver, which spatially matches the VCSEL array, was developed for receive. Both of these circuits were fabricated in a standard commercial GaAs MESFET process with parasitic photodetectors used for the photoreceivers. Power dissipation and circuit size were primary design challenges for both circuits. The present 8 × 8 array size along with an estimated usable channel speed of 1 Gb/s allows for an aggregate throughput of 64 Gb/s.
KW - Driver circuits
KW - Integrated optoelectronics
KW - MESFET integrated circuits
KW - Optical interconnections
KW - Optical receivers
KW - Photodetectors
KW - Semiconductor laser arrays
KW - Transimpedance amplifiers
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U2 - 10.1109/4.944654
DO - 10.1109/4.944654
M3 - Article
AN - SCOPUS:0035445557
SN - 0018-9200
VL - 36
SP - 1297
EP - 1302
JO - IEEE Journal of Solid-State Circuits
JF - IEEE Journal of Solid-State Circuits
IS - 9
ER -