Two-carrier transport in epitaxially grown MnAs

J. J. Berry, S. J. Potashnik, S. H. Chun, K. C. Ku, P. Schiffer, N. Samarth

Research output: Contribution to journalArticle

Abstract

Magnetotransport measurements of ferromagnetic MnAs epilayers grown by molecular beam epitaxy reveal the presence of both positive and negative charge carriers. Electrical transport at high temperatures is dominated by holes and at low temperatures by electrons. We also observe distinct changes in the magnetoresistance associated with the transition between the electron- and hole-dominated transport regimes. These results are of direct relevance to MnAs/semiconductor hybrid heterostructures and their exploitation in electronic and optical spin injection experiments.

Original languageEnglish (US)
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume64
Issue number5
DOIs
StatePublished - Jan 1 2001

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Berry, J. J., Potashnik, S. J., Chun, S. H., Ku, K. C., Schiffer, P., & Samarth, N. (2001). Two-carrier transport in epitaxially grown MnAs. Physical Review B - Condensed Matter and Materials Physics, 64(5). https://doi.org/10.1103/PhysRevB.64.052408