Twinning superlattice in VLS grown planar GaAs nanowires induced by impurity doping

Ryan Dowdy, Parsian Mohseni, Seth A. Fortuna, Jianguo Wen, Xiuling Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In situ doping with Zn and C impurities induces periodic twin plane boundaries along the axis of planar <110> GaAs nanowires grown via Au-catalyzed vapor-liquid-solid (VLS) mechanism in a MOCVD environment.

Original languageEnglish (US)
Title of host publication2012 IEEE Photonics Conference, IPC 2012
Pages693-694
Number of pages2
DOIs
StatePublished - 2012
Event25th IEEE Photonics Conference, IPC 2012 - Burlingame, CA, United States
Duration: Sep 23 2012Sep 27 2012

Publication series

Name2012 IEEE Photonics Conference, IPC 2012

Other

Other25th IEEE Photonics Conference, IPC 2012
Country/TerritoryUnited States
CityBurlingame, CA
Period9/23/129/27/12

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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