TY - JOUR
T1 - Tunneling Modulation of Transistor Lasers
T2 - Theory and Experiment
AU - Feng, Milton
AU - Qiu, Junyi
AU - Holonyak, Nick
N1 - Manuscript received December 31, 2017; accepted February 6, 2018. Date of publication February 27, 2018; date of current version March 13, 2018. This work was supported in part by Dr. Kenneth C. Goretta, Air Force of Scientific Research under Grant FA9550-15-1-0122, in part by Dr. Michael Gerhold of the Army Research Office under Grant W911NF-17-1-0112,in part by the Pao Family Fellowship, in part by the National Science Foundation under Grant 1640196, and in part by the Nanoelectronics Research Corporation, a wholly-owned subsidiary of the Semiconductor Research Corporation (SRC), through Electronic-Photonic Integration Using the Transistor Laser for Energy-Efficient Computing, an SRC-NRI Nanoelectronics Research Initiative through Research Task under Grant 2697.001.The work of M. Feng was supported by the N. Holonyak, Jr., Emeritus Chair of Electrical and Computer Engineering. The work of N. Holonyak, Jr., was supported by the John Bardeen Emeritus Chair (Sony) of Electrical and Computer Engineering and Physics. (Corresponding author: Junyi Qiu.) The authors are with the Department of Electrical and Computer Engineering, Microelectronics and Nanotechnology Laboratory, University of Illinois at Urbana\u2013Champaign, Champaign, IL 61801 USA (e-mail: [email protected]).
PY - 2018/4
Y1 - 2018/4
N2 - The coherent photons generated at the base quantum wells in the transistor laser (TL) interact with the collector field and 'assist' electron tunneling from the valence band of the base to the conduction band states of the collector. The cavity coherent photon intensity effect on photon-assisted tunneling in the TL has resulted in the realization of a novel photon-field enhanced optical absorption. This intra-cavity photon-assisted tunneling (ICPAT) in the TL or the light-emitting transistor is the unique property of voltage (field) modulation and the basis for ultrahigh speed direct tunneling photon modulation and switching. In addition, a new tunneling current modulation gain in a 'new form' of transistor is discovered based on the collector tunneling holes feedback to the base and dielectric relaxation base transport. The TL, owing to its unique three-terminal configuration and the complementary nature of its optical and electrical collector output signals, enables fast base recombination, collector tunneling, and OEO feedback, which has resulted in the realization of compact electro-optical applications, such as non-linear signal-mixing, frequency multiplication, OE tunneling transistor, and electrical and optical bistability.
AB - The coherent photons generated at the base quantum wells in the transistor laser (TL) interact with the collector field and 'assist' electron tunneling from the valence band of the base to the conduction band states of the collector. The cavity coherent photon intensity effect on photon-assisted tunneling in the TL has resulted in the realization of a novel photon-field enhanced optical absorption. This intra-cavity photon-assisted tunneling (ICPAT) in the TL or the light-emitting transistor is the unique property of voltage (field) modulation and the basis for ultrahigh speed direct tunneling photon modulation and switching. In addition, a new tunneling current modulation gain in a 'new form' of transistor is discovered based on the collector tunneling holes feedback to the base and dielectric relaxation base transport. The TL, owing to its unique three-terminal configuration and the complementary nature of its optical and electrical collector output signals, enables fast base recombination, collector tunneling, and OEO feedback, which has resulted in the realization of compact electro-optical applications, such as non-linear signal-mixing, frequency multiplication, OE tunneling transistor, and electrical and optical bistability.
KW - Transistor
KW - analog and logic optoelectronic circuits
KW - carrier-photon dynamics
KW - current and voltage modulation
KW - diode laser
KW - electrical and optical bistability
KW - feedback linearization
KW - frequency multiplication
KW - heterojunction bipolar transistor
KW - microwave equivalent circuit model
KW - optical switch
KW - resonance-free response
KW - stimulated and spontaneous recombination
KW - transistor laser
KW - tunnel junction
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U2 - 10.1109/JQE.2018.2809471
DO - 10.1109/JQE.2018.2809471
M3 - Article
AN - SCOPUS:85042711691
SN - 0018-9197
VL - 54
JO - IEEE Journal of Quantum Electronics
JF - IEEE Journal of Quantum Electronics
IS - 2
M1 - 2000514
ER -