@article{5f59a7672372465194e033656299a574,
title = "Tunneling modulation of a quantum-well transistor laser",
abstract = "Different than the Bardeen and Brattain transistor (1947) with the current gain depending on the ratio of the base carrier spontaneous recombination lifetime to the emitter-collector transit time, the Feng and Holonyak transistor laser current gain depends upon the base electron-hole (e-h) stimulated recombination, the base dielectric relaxation transport, and the collector stimulated tunneling. For the n-p-n transistor laser tunneling operation, the electron-hole pairs are generated at the collector junction under the influence of intra-cavity photon-assisted tunneling, with electrons drifting to the collector and holes drifting to the base. The excess charge in the base lowers the emitter junction energy barrier, allowing emitter electron injection into the base and satisfying charge neutrality via base dielectric relaxation transport (∼femtoseconds). The excess electrons near the collector junction undergo stimulated recombination at the base quantum-well or transport to the collector, thus supporting tunneling current amplification and optical modulation of the transistor laser.",
author = "M. Feng and J. Qiu and Wang, {C. Y.} and N. Holonyak",
note = "Funding Information: This work has been supported in part by the Air Force Office Scientific Research under Grant No. AF FA9550-15-1-0122. N. Holonyak, Jr., is grateful for the support of the John Bardeen Chair (Sony) of Electrical and Computer Engineering and Physics, and M. Feng for the support of the Nick Holonyak, Jr., Chair of Electrical and Computer Engineering. After December 23, 1947 and John Bardeen's identification (at BTL) of the transistor and the importance of the electron and hole, i.e., e and h conductance bipolarity, we remain indebted to John Bardeen, our mentor, for his lifelong continuing interest in the transistor (parallel to the BCS theory), the effect of the electron and the hole (e-h) in helping to originate the diode laser and LED, and in addition now leading to the e-h recombination (electrical and optical) transistor laser. N.H. is especially grateful to John Bardeen for bringing transistor research to Urbana (1951) and changing all of our lives world-wide with the new quantum-physics and solid state devices. Publisher Copyright: {\textcopyright} 2016 Author(s). Copyright: Copyright 2016 Elsevier B.V., All rights reserved.",
year = "2016",
month = nov,
day = "28",
doi = "10.1063/1.4967922",
language = "English (US)",
volume = "120",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "20",
}