Abstract
A tunneling injection mechanism into the channel of a modulation doping field effect transistor is discussed. In the presaturation regime of the drain current, the source current exhibits negative differential resistance as a result of the charge control by the gate field in the channel. The tunneling three-terminal device promises high-frequency operation.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1530-1532 |
| Number of pages | 3 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 35 |
| Issue number | 9 |
| DOIs | |
| State | Published - Sep 1988 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering