Tunneling Injection into Modulation Doping Structures: A Mechanism for Negative Differential Resistance Three-Terminal High-Speed Devices

Jean Pierre Leburton, James Kolodzey

Research output: Contribution to journalArticlepeer-review

Abstract

A tunneling injection mechanism into the channel of a modulation doping field effect transistor is discussed. In the presaturation regime of the drain current, the source current exhibits negative differential resistance as a result of the charge control by the gate field in the channel. The tunneling three-terminal device promises high-frequency operation.

Original languageEnglish (US)
Pages (from-to)1530-1532
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume35
Issue number9
DOIs
StatePublished - Sep 1988

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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