TY - JOUR
T1 - Tunneling Injection into Modulation Doping Structures
T2 - A Mechanism for Negative Differential Resistance Three-Terminal High-Speed Devices
AU - Leburton, Jean Pierre
AU - Kolodzey, James
N1 - Funding Information:
Manuscript received November 17, 1987; revised May 11, 1988. This work was supported in part by the NSF Engineering Research Center for Compound Semiconductor Microelectronics, the Joint Service Electronic Program, and the Navy under Contract NOOD 14-86 K0512.
PY - 1988/9
Y1 - 1988/9
N2 - A tunneling injection mechanism into the channel of a modulation doping field effect transistor is discussed. In the presaturation regime of the drain current, the source current exhibits negative differential resistance as a result of the charge control by the gate field in the channel. The tunneling three-terminal device promises high-frequency operation.
AB - A tunneling injection mechanism into the channel of a modulation doping field effect transistor is discussed. In the presaturation regime of the drain current, the source current exhibits negative differential resistance as a result of the charge control by the gate field in the channel. The tunneling three-terminal device promises high-frequency operation.
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U2 - 10.1109/16.2587
DO - 10.1109/16.2587
M3 - Article
AN - SCOPUS:0024069052
SN - 0018-9383
VL - 35
SP - 1530
EP - 1532
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 9
ER -