Abstract
A transistor laser with a tunnel junction collector is demonstrated. Its optical output is sensitive to third terminal voltage control owing to the electron tunneling (photon-assisted or not assisted) from the base to collector, which acts in further support of resupply of holes for recombination in addition to the usual base Ohmic current, IB. Collector tunneling enhances laser operation even under a weak collector junction field and quenches it under a strong reverse-biased field. The sensitivity of the tunnel junction transistor laser to voltage control enables the tunnel junction transistor laser to be directly modulated by both current and voltage control.
| Original language | English (US) |
|---|---|
| Article number | 041118 |
| Journal | Applied Physics Letters |
| Volume | 94 |
| Issue number | 4 |
| DOIs | |
| State | Published - 2009 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)