Tuning the photoluminescence characteristics with curvature for rolled-up GaAs quantum well microtubes

Ik Su Chun; Kevin Bassett; Archana Challa; Xiuling Li

doi:10.1063/1.3456098

Tuning the photoluminescence characteristics with curvature for rolled-up GaAs quantum well microtubes

Ik Su Chun, Kevin Bassett, Archana Challa, Xiuling Li

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

III-V microtubes and nanotubes are formed by a strain-induced self-rolling process. We report room-temperature photoluminescence (PL) characteristics of such microtubes with embedded GaAs quantum-well structures and wall thickness as thin as 38 nm. Rolled-up tubes show dramatic PL intensity enhancement compared to their planar counterparts. Holey tubes, formed using patterned membranes, display further increase in intensity implying better light extraction efficiency with the air holes. Systematic shift of PL peak position as a function of tube curvature, attributed to strain induced band structure change, is established.

Original language	English (US)
Article number	251106
Journal	Applied Physics Letters
Volume	96
Issue number	25
DOIs	https://doi.org/10.1063/1.3456098
State	Published - Jun 21 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3456098

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abstract = "III-V microtubes and nanotubes are formed by a strain-induced self-rolling process. We report room-temperature photoluminescence (PL) characteristics of such microtubes with embedded GaAs quantum-well structures and wall thickness as thin as 38 nm. Rolled-up tubes show dramatic PL intensity enhancement compared to their planar counterparts. Holey tubes, formed using patterned membranes, display further increase in intensity implying better light extraction efficiency with the air holes. Systematic shift of PL peak position as a function of tube curvature, attributed to strain induced band structure change, is established.",

author = "Chun, {Ik Su} and Kevin Bassett and Archana Challa and Xiuling Li",

note = "Funding Information: We acknowledge support by NSF CAREER ECCS under Grant No. 0747178, NSF Nano-CEMMS under Grant No. 0749028 and DARPA YFA under Grant No. N66001-09-1-2107; and Dr. Jianguo Wen for kindly performing the TEM measurement. ",

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N2 - III-V microtubes and nanotubes are formed by a strain-induced self-rolling process. We report room-temperature photoluminescence (PL) characteristics of such microtubes with embedded GaAs quantum-well structures and wall thickness as thin as 38 nm. Rolled-up tubes show dramatic PL intensity enhancement compared to their planar counterparts. Holey tubes, formed using patterned membranes, display further increase in intensity implying better light extraction efficiency with the air holes. Systematic shift of PL peak position as a function of tube curvature, attributed to strain induced band structure change, is established.

AB - III-V microtubes and nanotubes are formed by a strain-induced self-rolling process. We report room-temperature photoluminescence (PL) characteristics of such microtubes with embedded GaAs quantum-well structures and wall thickness as thin as 38 nm. Rolled-up tubes show dramatic PL intensity enhancement compared to their planar counterparts. Holey tubes, formed using patterned membranes, display further increase in intensity implying better light extraction efficiency with the air holes. Systematic shift of PL peak position as a function of tube curvature, attributed to strain induced band structure change, is established.

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Tuning the photoluminescence characteristics with curvature for rolled-up GaAs quantum well microtubes

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