TY - GEN
T1 - Tunable Ultra-Small Monolithically-Rolled-up Capacitors by Piezoelectric Actuation
AU - Nguyen, Kristen
AU - Yang, Zhendong
AU - Wang, Allen
AU - Wicker, Scott A.
AU - Li, Xiuling
N1 - Thank you to Qualcomm and the Qualcomm Innovation Fellowship for the support and funding that made this work possible. A special thanks to our wonderful mentors at Qualcomm, Willi Aigner and Thomas Metzger, who provided us with the invaluable insights and encouragement needed to bring this project to life.
PY - 2024
Y1 - 2024
N2 - The miniaturization of passive electronic components is essential for radio-frequency integrated circuits (RFICs). In addition, with the surge of wireless technologies, the need for reconfigurable and tunable radio-frequency (RF) components has grown. Enabled by strain-induced self-rolled-up membrane (S-RuM) technology, three-dimensional (3D) tubular interdigital capacitors with greatly reduced footprints can be made with diameter-dependent capacitances. By integrating piezoelectric AlScN, diameter and thus capacitance tuning is demonstrated for the prototyped capacitors, with preliminary data showing a tuning ratio of 1.41 and response of 15.75 pF/V for capacitances of over 150 pF and areal footprints of 0.18 mm2. These S-RuM-enabled piezoelectrically-tunable capacitors are easily redesigned to target different capacitances, frequencies, and tuning ratios, with little effect on footprint or process complexity, representing a novel capacitance tuning scheme enabling extreme miniaturization.
AB - The miniaturization of passive electronic components is essential for radio-frequency integrated circuits (RFICs). In addition, with the surge of wireless technologies, the need for reconfigurable and tunable radio-frequency (RF) components has grown. Enabled by strain-induced self-rolled-up membrane (S-RuM) technology, three-dimensional (3D) tubular interdigital capacitors with greatly reduced footprints can be made with diameter-dependent capacitances. By integrating piezoelectric AlScN, diameter and thus capacitance tuning is demonstrated for the prototyped capacitors, with preliminary data showing a tuning ratio of 1.41 and response of 15.75 pF/V for capacitances of over 150 pF and areal footprints of 0.18 mm2. These S-RuM-enabled piezoelectrically-tunable capacitors are easily redesigned to target different capacitances, frequencies, and tuning ratios, with little effect on footprint or process complexity, representing a novel capacitance tuning scheme enabling extreme miniaturization.
KW - AlScN
KW - MEMS
KW - Piezoelectric actuation
KW - S-RuM
KW - miniaturization
KW - tunable capacitor
UR - http://www.scopus.com/inward/record.url?scp=85186677940&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85186677940&partnerID=8YFLogxK
U2 - 10.1109/MEMS58180.2024.10439577
DO - 10.1109/MEMS58180.2024.10439577
M3 - Conference contribution
AN - SCOPUS:85186677940
T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
SP - 683
EP - 686
BT - IEEE 37th International Conference on Micro Electro Mechanical Systems, MEMS 2024
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 37th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2024
Y2 - 21 January 2024 through 25 January 2024
ER -