Tunable negative differential resistance in anti-dot diffraction field effect transistor

Jean-Pierre Leburton, Yu B. Lyanda-Geller

Research output: Contribution to journalArticlepeer-review

Abstract

Quantum diffraction of two-dimensional electrons by a periodic array of nanoscale quantum antidots is considered in the channel of a high mobility field effect transistor. A charge control model within a self-consistent analysis shows that the current characteristics of the new anti-dot diffraction field effect transistor exhibits tunable negative differential resistance and hysteresises which could persist above nitrogen temperature.

Original languageEnglish (US)
Pages (from-to)634-636
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number5
DOIs
StatePublished - Feb 3 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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