Trap-mediated excitation of Er3+ photoluminescence in Er-implanted GaN

S. Kim, S. J. Rhee, D. A. Turnbull, X. Li, J. J. Coleman, S. G. Bishop, P. B. Klein

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Site-selective photoluminescence (PL) spectra obtained at 6 K from the 1540 nm 4I13/24I15/2 emissions characteristic of four distinct Er3+ centers in Er-implanted films of GaN are compared with the Er3+ PL excited by 325 nm above-gap pump light. Two of the site-selective 1540 nm Er3+ PL spectra pumped by below-gap, trap-mediated excitation bands dominate the Er3+ PL spectrum excited by above-gap light. A third broad band-excited spectrum and a fourth spectrum pumped by direct Er3+ 4f-band absorption are apparently not strongly excited by above-gap light. These results indicate that trap-mediated excitation dominates above-gap pumping of Er3+ emission in GaN:Er, and suggest an explanation for the reduced thermal quenching of Er3+ emission in GaN.

Original languageEnglish (US)
Pages (from-to)2662-2664
Number of pages3
JournalApplied Physics Letters
Issue number18
StatePublished - Nov 3 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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